BUJ100,126 datasheet
- NXP Semiconductors
- Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 1 A; I<sub>C (SAT)</sub>: 0.5 A; tf<sub>(max)</sub>: 0.05s; V<sub>CESM</sub>: 700 V; Package: week 5, 2005
- Original
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