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    DSAZIHA1000199914.pdf

    • Toshiba
    • 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rati
    • Original
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    DSAZIHA1000199914.pdf preview Download Datasheet

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