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DSA00153410.pdf
Manufacturer
Cree
Partial File Text
CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree's CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifical
Datasheet Type
Original
ECAD Model
Part Details
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CGH35060F1-TB
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