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DSAIH00043827.pdf
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FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P-idg = 42.5dBm (Typ.) · High Gain: G 1dB = 13.0dB (Typ.)@1.8 GHz (FLL200IB-1) · High PAE: r ia
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