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    DSA0073219.pdf

    • Samsung Electronics
    • IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate C
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    DSA0073219.pdf preview Download Datasheet

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