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DSAHI000132056.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Elect
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
512M x 8 Bit NAND Flash Memory
tc58NVG2S3
TC58NVG2S3E
TC58NVG2S3ETAI0
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