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    DSAZIHA100025159.pdf

    • American Microsemiconductor
    • 2SD896 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ
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