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    DSA00371275.pdf

    • IXYS
    • High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 28N170 IXBT 28N170 VCES = 1700 V IC25 = 60 A VCE(sat) = 3.5 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM
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