DSA00320098.pdf
-
Infineon Technologies
-
BF543
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
3
preferably in FM applications
IDSS = 4mA, g fs = 12mS
2 1
VPS05161
ESD: Electrostatic discharge sensiti
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com