DSAZIHA100017293.pdf
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American Microsemiconductor
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2MBI150J060 Transistors
Half Bridge IGBT Power Module
Isolated Case (Y/N)Yes
Circuits Per Package1
V(BR)CES (V)600
V(BR)GES (V)20
I(C) Max. (A)150
Absolute Max. Power Diss. (W)450â
Minimum O
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Original
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