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    DSAEDA000123372.pdf

    • IXYS
    • High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE(sat) ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum
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