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    DSAZIHA100024156.pdf

    • American Microsemiconductor
    • 2N2662 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)50º V(BR)CBO (V)50 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)100# I(CBO) Max. (A)600u÷
    • Original

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