DSAEDA00068524.pdf
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Eudyna Devices
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FLC157XP
GaAs FET & HEMT Chips
FEATURES
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High Output Power: P1dB = 31.5dBm (Typ.)
High Gain: G1dB = 6.0dB(Typ.)
High PAE: ηadd = 29.5%(Typ.)
Proven Reliability
Drain
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Original
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