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    DSAEDA000123054.pdf

    • IXYS
    • IXKC 40N60C CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 28 A RDS(on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon,
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