DSA00592875.pdf
- Renesas Electronics
- Preliminary Datasheet RJK0601DPN-E0 N-Channel MOS FET 60 V, 110 A, 3.1 m Features High speed switching Low drive current Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Package TO-220
- Original
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