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DSAH00680994.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electr
Datasheet Type
Original
ECAD Model
Part Details
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TC58NVM9S3E
TSOP 48 Pattern
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