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DSA00153632.pdf
Manufacturer
Cree
Partial File Text
CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
Datasheet Type
Original
ECAD Model
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
CGH25120
CGH25120F-TB
RF Transistor s-parameter