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    DSAZIHA100019635.pdf

    • American Microsemiconductor
    • 2SC899 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n
    • Original

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