DSAIH000132933.pdf

Manufacturer Not Available
Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES: LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po =34.5 dBm Single Carrier Level HIGH POWER P i dB =45 dBm
Datasheet Type Scan
ECAD Model

DSAIH000132933.pdf preview Download Datasheet