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    DSA00592778.pdf

    • Renesas Electronics
    • Preliminary Datasheet RJK0602DPN-E0 N-Channel MOS FET 60 V, 100 A, 3.9 m Features High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Package TO-220
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