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DSA00240947.pdf
Manufacturer
Toshiba
Partial File Text
1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA ยท Small package suitable
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Original
ECAD Model
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1SS422