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    DSA00102811.pdf

    • Renesas Technology
    • RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features ยท High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 M
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