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DSAIH00083935.pdf
Manufacturer
Cree
Partial File Text
CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Creeâs CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
Datasheet Type
Original
ECAD Model
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