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DSAH00677016.pdf
Manufacturer
Toshiba
Partial File Text
SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications · · 4.0V drive Low ON-resistance: Ron = 100m (max) (@VGS = -4.0 V) Ron = 54m (ma
Datasheet Type
Original
ECAD Model
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