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    BSH112,235 datasheet Part Img

    • NXP Semiconductors
    • N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
      BSH112/T3 934056035235 BSH112T/R BSH112 BSH112
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    BSH112,235 datasheet preview Download Datasheet

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