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DSA0065172.pdf
Manufacturer
Cree
Partial File Text
PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficie
Datasheet Type
Original
ECAD Model
Part Details
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ATC600F
ATC600S
CGH2512
CGH25120
CGH25120F
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CGH25120FCGH25120F
Model CGH25120F
RO4350
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