DSAZIHA100060374.pdf
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American Microsemiconductor
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GDM21030 Thyristors
Center Tapped GTO Module with Common Anode
V(DRM) Max. (V)1k
V(RRM) Max. (V)1k
I(T) Rated Maximum (A)60±
@Temp. (øC) (Test Condition)
I(TSM) Max. (A)1.2k
@ t(w) (s) (Test
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Original
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