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    DSAHI000110134.pdf

    • OSRAM
    • 2007-12-07 GaAlAs Light Emitting Diode (660 nm) GaAlAs-Lumineszensdiode (660 nm) Version 1.0 SFH 4860 Features: · Fabricated in a liquid phase epitaxy process · Cathode is electrically connec
    • Original
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