Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA00153685.pdf

    • Cree
    • CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
    • Original
    • Price & Stock Powered by Findchips

    DSA00153685.pdf preview Download Datasheet

    User Tagged Keywords

    CGH35060
    Supplyframe Tracking Pixel