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Scans-00102308.pdf
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IRFP252,253 25 AMPERES 200,150 VOLTS rDS(ON) = 0.12 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excell
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ECAD Model
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IRFP252
IRFP253