BLF6G22S-45 datasheet by NXP Semiconductors
- Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608B ; Power gain: 18.5 dB
- Original
- Yes
- Yes
- Obsolete
-
Powered by
Findchips
