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    Scans-00156782.pdf

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    • CEA3055L March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 60V, 3.7a, rds(on)=100mQ @Vgs=10V. Rds(on)=1 20mQ @Vgs=4.5V. • High dense cell design for low Rds(on). â
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