ZXMN2A01 Search Results

Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V Features • • • • • • • • ID TA = +25°C 2.2A Description This new generation MOSFET is designed to minimize the on-state

sot23 2A1 device Marking

Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6
Contextual Info: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

sm8a

Abstract: ZXMN2A01FTA ZXMN2A01F ZXMN2A01FTC
Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

sot23-6 marking 131

Abstract: sot23 2A1 device Marking
Contextual Info: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

ZXMN2A01F

Abstract: ZXMN2A01FTA ZXMN2A01FTC A93V
Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

marking QG SOT23-6

Abstract: sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6
Contextual Info: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

sot23 2A1 device Marking

Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6
Contextual Info: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

D209A

Abstract: D-209A ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC 4422 MOSFET
Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=2.09A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

Contextual Info: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

D209A

Contextual Info: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=2.09A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

schematic LG lcd backlight inverter

Abstract: schematic diagram converter input 12v to 24v 4a schematic diagram solar inverter schematic lg backlight inverter solar inverters schematic diagram high power white led driver circuit diagram 12V DC to 24V dC converter schematic diagram schematic LG lcd power supply unit discharge curve CR123A electronic transformer halogen 12v
Contextual Info: DN81 Lighting handbook Introduction Light Emitting Diodes LEDs are becoming more and more popular in general illumination. They offer benefits in energy efficiency, long life and ruggedness. LEDs are low voltage devices and both safe and easy to use. However, LEDs are ‘current driven’ devices and simply applying a voltage to drive them is not a

DAP 07

Abstract: D01813H LM3404 solar 4V led buck 22-28-4023 Coilcraft D01813H LM3402 SI1539DL solar array shunt regulator solar shunt regulator
Contextual Info: National Semiconductor Application Note 1839 Matthew Reynolds December 10, 2008 Introduction Thermal Performance The LM3402/02HV and LM3404/04HV are buck regulator derived controlled current sources designed to drive a series string of high power, high brightness LEDs HBLEDs at forward currents of up to 0.5A (LM3402/02HV) or 1.0A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500w power amplifier circuit diagram

Abstract: 500w audio amplifier circuit diagram schematic diagram inverter 500w USING MOSFET 500w audio amplifier circuit diagram layout down Audio Power Amplifier MOSFET TOSHIBA schematic diagram PWM inverter 500w schematic PWM inverter 500w C18 ph zener 100w audio amplifier circuit diagram class D 350w power amplifier stereo
Contextual Info: REFERENCE DESIGN IRAUDAMP1 revB International Rectifier • 233 Kansas Street, El Segundo, CA 90245 z USA High Power Class D Audio Power Amplifier using IR2011S IRAUDAMP1 revB High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

ASD103

Contextual Info: DATE: 9th April, 2014 PCN #: 2140 PCN Title: Leadframe material change for SOT-25, SOT-26 and TSOT25 packages Dear Customer: This is an announcement of change s to products that are currently being

Contextual Info: ZXCT1032EV1 USER GUIDE Figure 1 Evaluation board components' layout DESCRIPTION The ZXCT1032EV1 provides a very convenient means for evaluating the capabilities of the ZXCT1032 current monitor. The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush