sj 2025
Abstract: kf 203 BN72 GE 52D 46V32 223222 F82W LXC 37 Z07N
Text: n ?a``WUf[a`e n MbWU[X[USf[a`e 562dd P_X]k kpg\ BeZi\d\ekXc OfkXip \eZf[\i D62Pz/ /z/Q/z Bk\d LNL fg\e Zfcc\Zkfi flkglk SfckX^\ flkglk J`e\ [i`m\i flkglk O\jgfej\ Qfk\d gfc\ flkglk LNL fg\e Zfcc\Zkfi flkglk k`d\ *O`j\1 SfckX^\ flkglk EXcc+ J`e\ [i`m\i flkglk
|
Original
|
PDF
|
562dd
D62Pz/
522bGq
77SCB
734/46SCB
722SCB
11iii0Sgfa`
/2282J
sj 2025
kf 203
BN72
GE 52D
46V32
223222
F82W
LXC 37
Z07N
|
EZ 644
Abstract: F 9624 CD kd 502 QHQM58445 6T-5 EZ 929
Text: 1,z{ /0./ 65<,7 2}9*/04. 7,2}= -A>LMJAK R SB7 Zfdgc`Xek `e XZZfi[XeZ\ n`k_ HDB :6499175 R Qkife^ i\j`jkXeZ\ XY`c`kp kf j_fik Z`iZl`k Zlii\ek Xk 7:44@ .74 k`d\j dfi\ k_Xe iXk\[ cfX[ Zlii\ek/ R 564@ jn`kZ_`e^ ZXgXY`c`kp R G\Xmp cfX[ lg kf 77268bT@ R 8bT [`\c\Zki`Z jki\e^k_
|
Original
|
PDF
|
77268bT@
694dT
EZ 644
F 9624 CD
kd 502
QHQM58445
6T-5
EZ 929
|
D1555
Abstract: t d1555 D-1555 d 1555 AN-101 output D1555
Text: Z~Communications, Inc. veo m o d e l d -1555 9939 Via Pasar • San Diego, California 92126 Phone 619 621-2700 FAX (619) 621-2722 Z-COMMUNICATIONS INC 45E D • rs . j • PAC5E 1 I ‘H b b M b b QOQGBbE T « Z C I PHASE NOISE (1Hz BW) (TYP) FEATURES • Exceptional Phase Noise Characteristics
|
OCR Scan
|
PDF
|
D-1555
10KHz
DS-1191
D1555
t d1555
D-1555
d 1555
AN-101
output D1555
|
WS57C51B-45C
Abstract: WS57C51B WS57C51B-55 WS57C51B-55TMB WS57C51B-45T
Text: WAFER SCALE INTEGRATION ^ 9 539690 W A F E R SCALE INTEGRATION = = dÈ J ÌS 3 ^ 0 99D 00182 OOQOlflS 1 J ~ D = r - H 6 - / 3 -z < \ _ WS57C51B WAFERSCALEINTEGRATION, INC. HIGH SPEED 16K X 8 CMOS flPflO/W KEY FEATURES •
|
OCR Scan
|
PDF
|
WS57C51B
AM27S51
WS57C51B
MIL-STD-883Ç
MIL-STD-883C"
MIL-STD-883C
WS57C51B-45C
WS57C51B-55
WS57C51B-55TMB
WS57C51B-45T
|
G3JL
Abstract: vq3001 VQ3001NF
Text: SUPERTEX INC Ql D Ë J fl7732^5 O D D 1777 d j TQ3001 VQ3001 V Q 7254 Surface M ount N- and P-Channel Quad Power MOSFET Arrays 7 -Ÿ 3 -Z S Ordering Information BVDgg/ ^DS ON (max) ^BOS Q1 + Q2 or V GS(th) (max) Order Number / Package 20 Terminal Q3 + Q4
|
OCR Scan
|
PDF
|
TQ3001
VQ3001
14-Pin
VQ3001N6
TQ3001N6
VQ7254N6
VQ3001N7
TQ3001N7
VQ7254N7
G3JL
VQ3001NF
|
Untitled
Abstract: No abstract text available
Text: Z I L0 <5 I N C ’ Q3 D m 1 T A M D M 3 OOOfllflO =1 O Z I L r Z8036 Military Z8000^ Z-CIO Counter/Timer _ and Parallel I/O Unit T “ 5 2 ~ 3 3 " Military Electrical Specification ¿ iliU V j July 1985 FEATURES • Two independent 8-bit, double-buffered, bidirectional I/O
|
OCR Scan
|
PDF
|
Z8036
Z8000^
IEEE-488)
16-vector
16-bit
44-Pln
T-52-33-05
40-PIN
44-PIN
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC514 1 02J/Z-80, TC514102J / Z - 1C DESCRIPTION T h e T C 5 1 4 1 0 2 J / Z is the n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 4 , 1 9 4 , 3 0 4 w o r d s b y 1 bit. T h e T C 5 1 4 1 0 2 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y as w e l l
|
OCR Scan
|
PDF
|
TC514
02J/Z-80,
TC514102J
TC514102J/Z-80,
TC514102J/Z-10
|
Untitled
Abstract: No abstract text available
Text: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced
|
OCR Scan
|
PDF
|
11002A
TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
|
ferranti
Abstract: Ferranti bus ZN501AJ ZN502CJ ZN502E Ferranti Semiconductors Ferranti ZN
Text: A-D CONVERTER FERRANTI semiconductors L ZN 501A J Z N 50 2E /C J 10-B it ¿iP-Compatible A to D Converters FEATURES • Choice o f lin e a rity: '/2LSB-ZN501, 1LSB-ZN 502 • 3-state o u tp u ts , TTL com patible • 15/j S ty p ic a l, 2 0 guaranteed conversion tim e
|
OCR Scan
|
PDF
|
10-Bit
LSB-ZN501,
1LSB-ZN502
15/jS
16-bit
ZN501
ZN502
ZN501AJ/502E/CJ
501AJ/502E/C
ferranti
Ferranti bus
ZN501AJ
ZN502CJ
ZN502E
Ferranti Semiconductors
Ferranti ZN
|
Untitled
Abstract: No abstract text available
Text: N a t i o n a l S e mi c on d u c t j r D 9 ro CLC425 Ul t ra L o w N o i s e W i d e b a n d Op A m p (A CD General Description Features The C LC 425 com bines a w ide bandw idth (1.9G H z G B W ) w ith very low input noise (1.05n V/VH z, 1 .6p A/VH z) and low d c e rro rs (1 OOjiV
|
OCR Scan
|
PDF
|
CLC425
CLC425
100dB
|
Untitled
Abstract: No abstract text available
Text: 1 0 4 8 ,5 7 6 W O R D x 4 BIT DYNAM IC RAM * This is advanced information and specifica tions are subject to change without notice. D ESC R IP T IO N The T C 514402A P /A J/A SJ/A Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The T C 514402A P /A J/A SJ/A Z utilizes TO SH IBA ’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
14402A
TC514402AP/AJ/ASJYAZ
300/350m
TC514402AP/AJ/ASJ/AZ-60
|
Untitled
Abstract: No abstract text available
Text: Z~Communications, Inc. Z-COMMUNICATIONS *4SE J> INC ^ b b ^ lb b 0GD035Ö fl H Z C I VCO MODEL D-81444 *T-S 0-lS PAGE1 9939 Via Pasar • San Diego, California 92126 Phone 619 621-2700 FAX (619) 621-2722 P H A S E N O IS E (1 Hz B W ) (TY P ) FEATURES Exceptional Phase Noise Characteristics
|
OCR Scan
|
PDF
|
0GD035Ö
D-81444
10KHz
13S30
DS-1191
|
Untitled
Abstract: No abstract text available
Text: 7^21537 r z j ^7# DD23451 1 • Ì'7 ° I-\S TL071 O^DD [Hj s [l[LHCT[^©[^]D©S_ TL071A-TL071 B S C S -T H O M S O N S 6 S-TROMSON 30E D LOW NOISE J-FET INPUT SINGLE OP-AMPs ■ LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE
|
OCR Scan
|
PDF
|
DD23451
TL071
TL071A-TL071
LCC20
D0234SÃ
T-79-15
TL071-TL071A-TL071B
0234Sc
|
Untitled
Abstract: No abstract text available
Text: 3bE J> • Z-COMMUN ICA TIÔNS INC ^ b b M b b DGGOISQ b « Z C I T 'S O -\ S ■ Z-Communications Inc. 5450 N.W, 33rd Avenue Ft. Lauderdale, FL 33309 Tel. 305 735-1000 FAX (305) 735-1094 D - lO O O V C O S E R IE S , _ . ( C o a x ia l R e S O n a tO r)
|
OCR Scan
|
PDF
|
D-1000
|
|
|
LF166
Abstract: LF167 LF155A
Text: _ a i r z 7 o D sa sô M *?_• _ l f i 55 s g s -th o m s o n lM g^(»[I lT[H](ôM(gS_ L F 1 5 6 -L F 1 5 7 S G S-THOMSON 3DE D J -F E T INPUT SINGLE OPERATIONAL AMPLIFIERS ■ REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT
|
OCR Scan
|
PDF
|
LF155-LF156-LF157
-99-M
LF166
LF167
LF155A
|
Untitled
Abstract: No abstract text available
Text: GEC PLESSEY I S E M I C O N D U C T Q~R~S | 3 0 1 5 -1 .0 Z N 5 0 1 A J 10-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN501 successive approxim ation A-D converter com bines several innovations The ch ip consists of a
|
OCR Scan
|
PDF
|
10-BIT
ZN501
ZN501AJ
|
Untitled
Abstract: No abstract text available
Text: 4TE D S ö b ö M S b 0[]QE:L53 Eb7 • MMHS H J tít¿ z Z 2 r O S MA TR A ti H S January 1991 HM 65797 HI-REL DATA SHEET 256 k X 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: V23809-F7-C10 Multimode 1300 nm LED Fibre Channel 266 MBd Transceiver* D im ension s in m m inches V ie w Z (Lead cross section and standoff size) PC board th ic k n e s s (10 max) .393 m ax (8.6 max) .170 m ax dd d d (2) .080 a _ j _ ]_ L (0.63 ±0.2)
|
OCR Scan
|
PDF
|
V23809-F7-C10
D-13623,
|
Untitled
Abstract: No abstract text available
Text: EP1830 EPLD Features J J IJ □ General Description A ltera's EP1830 Erasable P rog ram m able Logic D ev ice E P L D is a fast, low -p ow er version of the EP1810 device. The EP1830 c an im p lem e n t four 12-bit cou nters at up to 50 M H z and typically co n s u m e s 20 m A w h en
|
OCR Scan
|
PDF
|
EP1830
P1810T
EP1830-20,
EP1830-25,
EP1830-30
EP1830-25
|
OP-61
Abstract: 0P-61F
Text: - 64 - OP-61 Ü5»&J!*£ O & t y - k ; bMEE Vs=±15V • G B W : 200MHz Ta=25*C 0 3 . J I - U - h :45V/ u s •A ^ iltm E riU n V /v O lz 81kHz • AvSlo -tr y K • — x / ü J L U ljjy im > 0* [l7 • 3 •3 N.C- T ] x 0 M 3 /H liH L z v ± » d 9 OP-61 ARC/883
|
OCR Scan
|
PDF
|
OP-61
200MHz
0P-61A
0P-61F
OP-61
ARC/883
20-CONTACT
0P-61F
|
Untitled
Abstract: No abstract text available
Text: S D "545 18 "0 0 8 - 0 l.7 4 n DWG. NO. (0.46) _ (B)_ [0741 m (K t ,JW7Z\ A L06 LD ?IH Dlllllfllfllfllflll)ll) Ifllll) QQQQQQQDI TERMINAL o SECT Z-Z 0„5 — © © Q + (4.2) 0.5 J i '(£> © © o F IT T IN G N AIL LO ii ni ninin ,i ,i ,i ,i ,
|
OCR Scan
|
PDF
|
SD-545
-02JI097)
XJ-54
|
ALS819
Abstract: AM29818 SN74ALS29818 SN74ALS819
Text: <z> SN74ALS819, SN74^i.S29818 8 BIT DIAGNOSTICS/PIPELINE REGISTERS 002352 2-35~> D 2 2 9 8 , J A N U A R Y 1 9 8 6 - R E V IS E D O C T O B E R 1 9 8 6 • High-Speed 8-B it Parallel Pipeline Register • Serial Shadow Register w ith Right-Shift Only S N 7 4 A L S 8 1 9 . . . D W OR J T P A C K A G E
|
OCR Scan
|
PDF
|
ALS29818
ALS29818)
ALS819
AM29818
AM29818
SN74ALS29818
SN74ALS819
|
M74HC4094B1N
Abstract: 74hc4094
Text: r z j SGS-THOM SON M54HC4094 M74HC4094 *7 # « IlO ÂIlLIKgîM D Êi 8-BIT SIPO SHIFT LATCH REGISTER 3-STATE • HIGH SPEED fMAx = 42 MHz (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION lCc = 4 11A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.)
|
OCR Scan
|
PDF
|
M54HC4094
M74HC4094
4094B
M74HC4094
MH4HC4094
M54/74HC4094
M74HC4094B1N
74hc4094
|
74HCT563
Abstract: No abstract text available
Text: r z j SCS-THOM SON M54HCT563/573 ^ 7 1 , !M gl(»[i(gTOmO(gS_ M74HCT563/573 OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT HCT563 INVERTING - HCT573 NON-INVERTING • HIGH SPEED tpD = 20 ns (TYP. at V c c = 5V ■ LOW POWER DISSIPATION lCC = 4 jbA (MAX.) at Ta = 25°C
|
OCR Scan
|
PDF
|
M54HCT563/573
M74HCT563/573
HCT563
HCT573
54/74LS563/573
M54HCTXXX
M74HCTXXX
74HCT563
|
