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    "P-CHANNEL JFET" SEMICONDUCTOR Search Results

    "P-CHANNEL JFET" SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    "P-CHANNEL JFET" SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "P-Channel JFET"

    Abstract: SHD231009 "P-Channel JFET" semiconductor p jfet
    Text: SENSITRON SEMICONDUCTOR SHD231009 TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: • 30 V, 75 Ω, 30 mA P-Channel JFET • Hermetically Sealed • Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD231009 "P-Channel JFET" SHD231009 "P-Channel JFET" semiconductor p jfet

    Untitled

    Abstract: No abstract text available
    Text: LS846 N-CHANNEL JFET Linear Systems Low Leakage Low Noise JFET The LS846 is a high-performance JFET featuring extremely low noise and low leakage and is targeted for use in a wide range of precision instrumentation applications. The 8 Pin P-DIP and 8 Pin SOIC provide ease of


    Original     		PDF LS846

    MMBFJ177LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document byMMBFJ177LT1/D DATA I o JFET Chopper P-Channel — Depletion 2 SOURCE MMBFJ177LTI I A G:TE+ Y ~.,l~~+i ;.:,’ ‘ *., *b,. .,.K.:\’:~ 1 DRAIN ! .:.\.> Rating Voltage Reverse Gat*Source Voltage Symbol


    Original     		PDF byMMBFJ177LT1/D MMBFJ177LTI OT-23 O-236AB) 14WI-2447 2W29298 MMBFJ177LT1/D MMBFJ177LT1

    Untitled

    Abstract: No abstract text available
    Text: 2N5114 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C


    Original     		PDF 2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 25-year-old, 2N5114

    Untitled

    Abstract: No abstract text available
    Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85Ω LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures


    Original     		PDF J/SST174 OT-23 350mW -50mA 25-year-old, SST174

    Untitled

    Abstract: No abstract text available
    Text: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75Ω LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature


    Original     		PDF 2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 2N5114 25-year-old, LS5114

    2n5114

    Abstract: No abstract text available
    Text: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75 LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature


    Original     		PDF 2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 2N5114 25-year-old, LS5114

    2N5018

    Abstract: No abstract text available
    Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE TO-18 TOP VIEW 75Ω LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 S Maximum Temperatures Storage Temperature -55 to 150°C


    Original     		PDF 2N5018 2N5018 500mW -10mA 25-year-old,

    6W MARKING CODE SOT23

    Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
    Text: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit


    Original     		PDF MMBFJ175LT1 OT-23 O-236) MMBFJ175LT1/D 6W MARKING CODE SOT23 MMBFJ175LT1 MMBFJ175LT1G 6w sot23

    UNION CARBIDE

    Abstract: No abstract text available
    Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE 75Ω LOW ON RESISTANCE TO-18 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C unless otherwise stated S Maximum Temperatures Storage Temperature -55 to 150°C


    Original     		PDF 2N5018 2N5018 500mW -10mA 25-year-old, UNION CARBIDE

    amelco

    Abstract: No abstract text available
    Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85 LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures SST SERIES


    Original     		PDF J/SST174 OT-23 350mW -50mA 25-year-old, SST174 amelco

    SOT-23 marking 12F

    Abstract: 2000E7
    Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P-Channel MMBF5460LT1 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc


    OCR Scan     		PDF MMBF5460LT1/D MMBF5460LT1 OT-23 O-236AB) SOT-23 marking 12F 2000E7

    6x marking sot-23 p-channel

    Abstract: 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET CMPFJ174 P-Channel JFET Amplifier marking code ny CMPFJ175 CMPFJ176
    Text: Data Sheet CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 Central Sem icon du ctor Corp. SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 OT-23 6x marking sot-23 p-channel 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET P-Channel JFET Amplifier marking code ny

    MMBF5486LT1

    Abstract: 318C8 marking gfg 6f
    Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol


    OCR Scan     		PDF MMBF5486LT1/D MMBF5486LT1 OT-23 O-236AB) MMBF5486LT1 318C8 marking gfg 6f

    "P-Channel JFETs"

    Abstract: 2N5116
    Text: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92


    OCR Scan     		PDF tSD113D T-39-01 "P-Channel JFETs" 2N5116

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFÜ175LT1 P-Channel — Depletion Motorola Preferred Device 2 SOURCE % 1 DRAIN 2 MAXIMUM RATINGS Rating D ra in -G a te Voltage Reverse G a te -S o u rce Voltage Symbol Value Unit VDG 25 V VGS r -2 5 V


    OCR Scan     		PDF 175LT1 OT-23 236AB) MMBFJ175LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C


    OCR Scan     		PDF

    PF5301

    Abstract: No abstract text available
    Text: JFET Transistors NATL INational Semiconductor N-Channel JFETs Caso Style 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A •gss p F @ V dg Max (V) Vp ■d s s (fiA @V |jS) VDS ■d (V) Min Max (V) (nA) Min Max (V) @ Gf» (fim ho) @Vqs Min Max (V) TO-72 TO-72


    OCR Scan     		PDF 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A NF5301 NF5301-1 NF5301-2 NF5301-3 PF5301

    ls841

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS840 LS841 LS842 J.OW NOISE LOW DRIFT LOW CAPACITANCE MONOUTHIC DUAL N-CHANNEL JFET Linear Integrateci Systems FEATURES LOW NOISE en=8n V /H zT Y P . LOW LEAKAGE iQ = 10pATYP. LOW DRIFT 1V GS1-2 7 Tl= 5MV/°C max. LOW OFFSET VOLTAGE IV G s i. 2 l = 2 m V T Y P -


    OCR Scan     		PDF 10pATYP. LS840 LS841 LS842 400mW 200pA 200pA 100Hz

    Untitled

    Abstract: No abstract text available
    Text: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch October 1997 Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET.


    OCR Scan     		PDF IH401A IH401A 2N4391, 1-800-4-HARRIS

    "P-Channel JFET"

    Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
    Text: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF CMPF5460 CMPF5461 CMPF5462 OT-23 100Hz "P-Channel JFET" CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"

    2N5460

    Abstract: 2n5462 2N5461
    Text: Data Sheet 2N546Ö 2N5461 2N5462 Ul P-CHANNEL JFET S e m ic o n d u c to r C o rp . JEDEC T O -92 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of W orld C lass Discrete Semiconductors m I • v u


    OCR Scan     		PDF 2N5k62 to-92 2N5460 2N5h60 2N5461 100Hzl 100Hz 2n5462 2N5461

    Untitled

    Abstract: No abstract text available
    Text: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5


    OCR Scan     		PDF 2N5018 2N5019 2N5114 2N5115 2N5116 P1086 P1087

    2N5458 NATIONAL SEMICONDUCTOR

    Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
    Text: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A


    OCR Scan     		PDF b501130 003THTfl 2N3684 2N3686 2N3822 PN4303 2N4338 T0-18 2N4339 2N5458 NATIONAL SEMICONDUCTOR to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET