Contextual Info: NF5301-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(GSS) Max. (A)1.0p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

NPD5566

Abstract: NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102
Contextual Info: NATL SEUICOND 6 5 0 1130 <D •o 3 a c o ■ IB o a> </ {DISCRETE} NATL " S E M I CO N D, 2û DE t S D 1 1 3 D 28C (D ISCR ETE) ào r+- QD35470 35470 D r-j/ ~ (T> r \ i ru oj n cm w r* r*» Is » t CJ Ci 2 j w 2J W 0 > 0 ) 0 ) 0 j 0 ) 0 ) 0 > 0 > 0 ) 0 ) 0 ) 0 ) 0 ) 0 > 0 > 0 ) 0 >

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGU E. INC *Î3 J> WÊ 05Q433Ô S E M IC O N D S / IC S O O O S b l M 3 • AL6R 93D 03614 J> 7=z.?-zSMETAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Î A = 25°C

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

PF5301

Contextual Info: JFET Transistors NATL INational Semiconductor N-Channel JFETs Caso Style 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A •gss p F @ V dg Max (V) Vp ■d s s (fiA @V |jS) VDS ■d (V) Min Max (V) (nA) Min Max (V) @ Gf» (fim ho) @Vqs Min Max (V) TO-72 TO-72

E101 FET

Abstract: c681 FET FET C681 50P3P U320 FET 2SK160 NEC u320 motorola KE4859 Z3M g BFS21A
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS loss Uta VaS(Off) lass elsa Max (Vl (AJ Min (S) Max Max (V) Max (F) (A) Po Max (W) Derate at Toper (wre) tOe) Package Max Style N-Channel JFETs, (Cont'd) 5 10 2N5432 J106 J106-18 J106-18 J106-18 TPJ106

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.