m8050
Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8050
100mA
800mA
800mA,
30MHz
m8050
y11 transistor
M8050-TRANSISTOR
transistor y11 sot-23
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y11 transistor
Abstract: transistor y11 sot-23 .y11 transistor
Text: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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M8050
OT-23
OT-23
100mA
800mA
800mA,
30MHz
y11 transistor
transistor y11 sot-23
.y11 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8050
OT-23
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M8050
Abstract: No abstract text available
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11
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M8050
200mW
OT-23
M8050-L
800mA,
30MHz
800mA
M8050
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M8050
Abstract: m8050 NPN equivalent M8050 equivalent
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11
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M8050
200mW
OT-23
M8050-L
M8050ation
800mA,
30MHz
25-Nov-2010
M8050
m8050 NPN equivalent
M8050 equivalent
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AN478A
Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network
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AN423/D
AN423
AN478A
AN478A MOTOROLA
2N3823 fet
motorola an-215
WESCON-1967
2N3823 equivalent
Y212
Theory of Modern Electronic Semiconductor Device
BIPOLAR Transistor high frequency
2N3823
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g21 Transistor
Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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S9018
1100MHz
OT-23
MRA151
MRA153
g21 Transistor
transistor y21
y11 transistor
transistor S9018
S9018 transistor
Y22 SOT23
s9018
B1140
transistor y21 sot-23
y21 transistor
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CA3102
Abstract: CA3102E CA3102M CA3102MZ FN611
Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
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CA3102
500MHz
CA3102
500MHz.
FN611
200MHz
CA3102E
CA3102M
CA3102MZ
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CA3102
Abstract: CA3102E CA3102M MS-012-AB
Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
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CA3102
500MHz
CA3102
500MHz.
200MHz
CA3102E
CA3102M
MS-012-AB
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B12 IC marking code
Abstract: BF547 MSB003 Y22 SOT23 transistor y21
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF
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BF547
MSB003
B12 IC marking code
BF547
MSB003
Y22 SOT23
transistor y21
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MBB400
Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation
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BF747
MSB003
MBB400
MSB003
BF747
transistor y21
y21 transistor
marking code 604 SOT23
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mbb400
Abstract: BF747 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation
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BF747
MSB003
mbb400
BF747
MSB003
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BF547
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF
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BF547
MSB003
BF547
MSB003
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Y22 SOT23
Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor
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PMBTH10
PMBTH10
PMBTH81.
MSB003
Y22 SOT23
MSB003
g21 Transistor
B22 base
PMBTH81
transistor b11
switching transistor
y11 transistor
transistor G11
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BF747
Abstract: MBB400 sot23-4 marking a1
Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.
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BF747
BF747
MBB400
sot23-4 marking a1
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bf547 philips
Abstract: BF547 B12 IC marking code marking code 604 SOT23
Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation
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BF547
bf547 philips
BF547
B12 IC marking code
marking code 604 SOT23
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AN5337 ca3028
Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The
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CA3028
CA3028A
CA3028B
100MHz
CA3028A
CA3028B
AN5337 ca3028
AN5337
trw rf transistor
trw RF POWER TRANSISTOR
AN5337 equivalent
RF amplifiers in the HF and VHF
JB22
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mmbfj310
Abstract: MMBFJ309
Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556
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MMBFJ309LT1
MMBFJ310LT1
236AB)
MMBFJ309LT1
mmbfj310
MMBFJ309
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CA3054
Abstract: cascode transistor array CA3054M CA3054M96
Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential
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CA3054
120MHz
CA3054
300MHz.
120MHz.
cascode transistor array
CA3054M
CA3054M96
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DTB513ZE
Abstract: DTB513ZM SC-75A
Text: DTB513ZE / DTB513ZM Transistors -500mA / -12V Low VCE sat Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB513ZE (2) Supply voltage 0.2 0.1Min. (1) 0.2 0.15 0.5 0.5
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DTB513ZE
DTB513ZM
-500mA
DTB513ZE
DTB513ZM
SC-75A
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556
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MMBFU310LT1
236AB)
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CA3054M96
Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002
Text: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a
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CA3054
120MHz
CA3054
300MHz.
120MHz.
1-800-4-HARRIS
CA3054M96
double channel double balanced demodulators
CA3054M
MS8002
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AN215A
Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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AN215A/D
AN215A
AN215A
mosfet p321
Y12t
Using Linvill Techniques
common base amplifier circuit designing
Using Linvill Techniques for R. F. Amplifiers
y11t
h21b
Y12F
common emitter amplifier circuit designing
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance
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bb53c
BF748
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