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    Y12T Search Results

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    Y12T Price and Stock

    Vishay Semiconductors ZPY12-TAP

    DIODE ZENER 12V 1.3W DO204AL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZPY12-TAP Cut Tape 15,680 1
    • 1 $0.23
    • 10 $0.154
    • 100 $0.23
    • 1000 $0.048
    • 10000 $0.048
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    ZPY12-TAP Ammo Pack 10,000 5,000
    • 1 -
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    • 10000 $0.05696
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    Vishay Semiconductors ZPY12-TR

    DIODE ZENER 12V 1.3W DO204AL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZPY12-TR Cut Tape 8,106 1
    • 1 $0.23
    • 10 $0.153
    • 100 $0.23
    • 1000 $0.052
    • 10000 $0.051
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    ZPY12-TR Reel 5,000
    • 1 -
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    • 10000 $0.05696
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    Stanley Electric Co GTEW1151ASE-20Y-12-TR

    LED WARM WHT 2000K SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GTEW1151ASE-20Y-12-TR Digi-Reel 1,808 1
    • 1 $1.08
    • 10 $0.756
    • 100 $1.08
    • 1000 $0.44461
    • 10000 $0.44461
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    GTEW1151ASE-20Y-12-TR Cut Tape 1,808 1
    • 1 $1.08
    • 10 $0.756
    • 100 $1.08
    • 1000 $0.44461
    • 10000 $0.44461
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    GTEW1151ASE-20Y-12-TR Reel 3,000
    • 1 -
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    • 10000 $0.40806
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    Festo QBY-1-2T-U

    PUSH-IN Y-CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QBY-1-2T-U Bulk 20 1
    • 1 $9.63
    • 10 $9.63
    • 100 $9.63
    • 1000 $9.63
    • 10000 $9.63
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    Festo QBY-1-2T-3-8-U

    PUSH-IN Y-CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QBY-1-2T-3-8-U Bulk 20 1
    • 1 $8.78
    • 10 $8.78
    • 100 $8.78
    • 1000 $8.78
    • 10000 $8.78
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    Y12T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Y12t

    Abstract: No abstract text available
    Text: AU K CORP. KB3128Y59 KLB-320 Y-12-T 1. Descriptions The KB3128Y59 (KLB-320 Y-12-T) is a SMD type form package Yellow LED Technology: InGaAlP 2. Features Small Footprint Surface Mount Package ( 3.1 L x 2.8 W × 3.2 H [mm]) Forward Voltage(VF) from 2.2 to 2.5V @ Forward Current(IF)=20mA


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    KB3128Y59 KLB-320 Y-12-T) 08-AUG-11 AUK-LDM-001 Y12t PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


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    AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t PDF

    RJHSE-508

    Abstract: RJHSE-538X RJHSE-538W-01Y 538x
    Text: E F REVISIONS SYM ZONE A » .5 9 0 ECN, ERN NO. [1 4 .9 9 ]-» A PP R D . DATE SEP21/06 L C H A N PROPOSAL DRAWING GREEN j-K h .5 2 0 [1 3 .2 1 ] -W- .1 2 5 [ 3 .1 8 ] .1 0 0 RED [ 2 .5 4 ] I f ' FRONT VIEW .0 9 5 [2 .4 1 ]- .2 0 0 [5 .0 8 ]- BI-COLOR LED DETAIL


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    SEP21/Ã SEP21/04 RJHSE-508 RJHSE-538X RJHSE-538W-01Y 538x PDF

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


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    AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing PDF

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


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    C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P PDF

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original
    AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A PDF

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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