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    0.045 UF Search Results

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    KEMET Corporation CKC33C453KGGLCAUTO

    Multilayer Ceramic Capacitors MLCC - SMD/SMT .045UF 2KV 10% 3640
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    TTI CKC33C453KGGLCAUTO Reel 75
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    0.045 UF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STP30NF10FP

    Abstract: STB30NF10 STP30NF10 diode 400A
    Text: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A


    Original     		STB30NF10 STP30NF10 STP30NF10FP O-220/TO-220FP/D2PAK STP30NF10 O-263) STP30NF10FP STB30NF10 diode 400A PDF

    STN4NE03

    Abstract: No abstract text available
    Text: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STN4NE03 OT-223 STN4NE03 PDF

    STN4NE03

    Abstract: No abstract text available
    Text: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		STN4NE03 OT-223 STN4NE03 PDF

    BUZ11A

    Abstract: buz11a circuit datecode G1
    Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A O-220 175oC BUZ11A buz11a circuit datecode G1 PDF

    STS4DNF60L

    Abstract: No abstract text available
    Text: STS4DNF60L  N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 4 A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS4DNF60L STS4DNF60L PDF

    N4NE03

    Abstract: n4ne P008B STN4NE03 P008B DIODE
    Text: STN4NE03  N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N4NE03 30 V < 0.06 Ω 4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STN4NE03 OT-223 N4NE03 N4NE03 n4ne P008B STN4NE03 P008B DIODE PDF

    STS4DNF60L

    Abstract: No abstract text available
    Text: STS4DNF60L N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 4A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS4DNF60L STS4DNF60L PDF

    STS5NF60L

    Abstract: No abstract text available
    Text: STS5NF60L N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5NF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 5A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS5NF60L STS5NF60L PDF

    STS5NF60L

    Abstract: No abstract text available
    Text: STS5NF60L  N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5NF 60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 5 A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		STS5NF60L STS5NF60L PDF

    STE70NM50

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		STE70NM50 STE70NM50 PDF

    Untitled

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STE70NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		STE70NM50 PDF

    mosfet 60v 60a

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		Max247 STY60NM50 Max247 mosfet 60v 60a PDF

    Untitled

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		STE70NM50 PDF

    STE70NM50

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		STE70NM50 STE70NM50 PDF

    BUZ11

    Abstract: stmicroelectronics datecode BUZ11a buz11a circuit datecode G1
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A -TO-220 STripFET POWER MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A -TO-220 175oC O-220 BUZ11 stmicroelectronics datecode BUZ11a buz11a circuit datecode G1 PDF

    p30ne06

    Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
    Text: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω


    Original     		STP30NE06 STP30NE06FP O-220/TO-220FP P30NE06 P30NE06FP 175oC p30ne06 STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		Max247 STY60NM50 Max247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Package Information www.vishay.com Vishay Siliconix TO-251AA IPAK   E A MILLIMETERS L2 c1 b2 D L3 L1 b1 b e MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214


    Original     		O-251AA T13-0362-Rev. 03-Jun-13ï 03-Jun-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		Max247 STY60NM50 Max247 PDF

    Untitled

    Abstract: No abstract text available
    Text: STS4DNF60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 STripFET POWER MOSFET TYPE STS4DNF60L • ■ ■ VDSS RDS on ID 60 V <0.055 Ω 4A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of


    Original     		STS4DNF60L PDF

    STY60NM50

    Abstract: No abstract text available
    Text: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		STY60NM50 Max247 STY60NM50 PDF

    buz11a circuit

    Abstract: BUZ11A st buz11a ISD 1400 d BUZ11A data
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A O-220 175oC 50ghts buz11a circuit BUZ11A st buz11a ISD 1400 d BUZ11A data PDF

    RB520S-40

    Abstract: No abstract text available
    Text: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance


    Original     		RB520S40 2002/95/EC IEC61249 OD-523 OD-523, MIL-STD-750, RB520S-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance


    Original     		RB520S40 OD-523 2011/65/EU IEC61249 OD-523, MIL-STD-750, PDF