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    BUZ11A Search Results

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    BUZ11A Price and Stock

    STMicroelectronics BUZ11A

    TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ11A 15,033
    • 1 $1.7825
    • 10 $1.7825
    • 100 $1.7825
    • 1000 $0.82
    • 10000 $0.7487
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    BUZ11A 1,044
    • 1 $2.774
    • 10 $2.774
    • 100 $2.774
    • 1000 $1.0403
    • 10000 $1.0403
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    Vyrian BUZ11A 335
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    Siemens BUZ11A

    TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ11A 83
    • 1 $1.7825
    • 10 $1.7825
    • 100 $1.0695
    • 1000 $1.0695
    • 10000 $1.0695
    		Buy Now
    ComSIT USA BUZ11A 10
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    Siemens BUZ11AL

    TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,26A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ11AL 16
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    Others BUZ-11A

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    Chip 1 Exchange BUZ-11A 14
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    BUZ11A Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ11A Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ11A Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ11A STMicroelectronics N-Channel 50 V-0.045 ohm-26 A TO-220 STripFET MOSFET Original PDF
    BUZ11A STMicroelectronics N-CHANNEL 50V - 0.045 Ohm - 26A -TO-220 STripFET POWER MOSFET Original PDF
    BUZ11A STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    BUZ11A STMicroelectronics N-Channel 50V - 0.045Ohm - 26A TO-220 STripFET MOSFET Original PDF
    BUZ11A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ11A Motorola Switchmode Datasheet Scan PDF
    BUZ11A Motorola European Master Selection Guide 1986 Scan PDF
    BUZ11A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ11A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ11A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ11A Unknown FET Data Book Scan PDF
    BUZ11A Semelab MOS Power Transistor Scan PDF
    BUZ11A Siemens Power Transistors Scan PDF
    BUZ11A STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ11A Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    BUZ11ACHIP STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor DIE Scan PDF
    BUZ11AL Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) Original PDF
    BUZ11AL Toshiba Power MOSFETs Cross Reference Guide Original PDF

    BUZ11A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ11A 100oC 175oC O-220 BUZ11A PDF

    buz11a circuit

    Abstract: BUZ11A
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ11A 100oC 175oC O-220 buz11a circuit BUZ11A PDF

    BUZ11A

    Abstract: buz11a circuit datecode G1
    Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A O-220 175oC BUZ11A buz11a circuit datecode G1 PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    VBG15NB37

    Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


    Original     		O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L VBG15NB37 STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L PDF

    BUZ11

    Abstract: stmicroelectronics datecode BUZ11a buz11a circuit datecode G1
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A -TO-220 STripFET POWER MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A -TO-220 175oC O-220 BUZ11 stmicroelectronics datecode BUZ11a buz11a circuit datecode G1 PDF

    irf540 mosfet control motor

    Abstract: std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


    Original     		O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L irf540 mosfet control motor std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16 PDF

    buz11a circuit

    Abstract: BUZ11A st buz11a ISD 1400 d BUZ11A data
    Text: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ11A O-220 175oC 50ghts buz11a circuit BUZ11A st buz11a ISD 1400 d BUZ11A data PDF

    BUZ11A

    Abstract: BUZ11
    Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		BUZ11A -220A 10peration BUZ11A BUZ11 PDF

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E PDF

    BUZ11 motorola

    Abstract: BUZ11 buz11a
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as


    OCR Scan     		BUZ11 BUZ11A BUZ11 motorola buz11a PDF

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 PDF

    c5353

    Abstract: Z11A
    Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY


    OCR Scan     		BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A PDF

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


    OCR Scan     		BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203 PDF

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 PDF

    PVAPOX

    Abstract: No abstract text available
    Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate


    OCR Scan     		BUZ11A 156x156 MC-0074 PVAPOX PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:


    OCR Scan     		BUZ11A 156x156 C-0071. 19source PDF

    BUZ11A

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N * 7 /, « œ i L I ï ï [ M ] 0 S§ B U Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS(on BUZ11A 50 V 0.06 fi 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan     		BUZ11A 00A///S BUZ11A PDF

    BUZ11A

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		BUZ11A BUZ11A PDF

    SMP16P06

    Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
    Text: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1


    OCR Scan     		VNT008D1 VNT009D1 SMP7N60 SMP4N60 SMP8N50F2 SMP5N50F2 SMP3N50F2 SMP20N20 SMP40N10 SMP30N10 SMP16P06 SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 GE » _ _ • 7 = 1 2 ^ 2 3 7 Ü03D120 2 ■ [ Z J S GS-THOMSON 'T '-3 ,C M > 6 s-thomson/ [^D(g^(Q)g[Lg(g¥^(Q)^D S_ BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al


    OCR Scan     		03D120 BUZ11A 156x156 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL 50V - 0.045ft - 26A -TO-220 STripFET POWER MOSFET TYPE BUZ11 A V Id R D S o n dss 50 V < 0 .0 5 5 . Q. 26 A . TYPICAL Ros(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		BUZ11A 045ft -TO-220 BUZ11 PDF

    BUZ11A

    Abstract: No abstract text available
    Text: fZ 7 SCS-THOMSON BUZ11A [ * 03 & E g ï i » [ * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS(on BUZ11A 50 V 0.06 ß Id 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE INDUSTRIAL APPLICATIONS:


    OCR Scan     		BUZ11A BUZ11A PDF