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Infineon Technologies AG IRF640NPBF MOSFET N-CH 200V 18A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640NPBF	Tube	45,775		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.5256 10000 $0.4405	Buy Now
Avnet Americas	IRF640NPBF	Tube	23,472	18 Weeks	1	1 $0.35831 10 $0.35538 100 $0.34657 1000 $0.34657 10000 $0.34657	Buy Now
	IRF640NPBF	Bulk		17 Weeks, 5 Days	1	1 $0.863 10 $0.705 100 $0.546 1000 $0.458 10000 $0.458	Buy Now
	IRF640NPBF	Tube			2,000	1 - 10 - 100 - 1000 - 10000 $0.3495	Buy Now
Mouser Electronics	IRF640NPBF		25,292			1 $1.43 10 $0.728 100 $0.646 1000 $0.489 10000 $0.44	Buy Now
Newark	IRF640NPBF	Bulk	47,532		1	1 $0.863 10 $0.705 100 $0.546 1000 $0.458 10000 $0.458	Buy Now
RS	IRF640NPBF	Bulk		3 Weeks	50	1 - 10 - 100 $1.01 1000 $1.01 10000 $1.01	Get Quote

Rochester Electronics	IRF640NPBF		1,580		1	1 $0.4894 10 $0.4894 100 $0.46 1000 $0.416 10000 $0.416	Buy Now
TME	IRF640NPBF		640		1	1 $0.754 10 $0.611 100 $0.497 1000 $0.411 10000 $0.411	Buy Now
EBV Elektronik	IRF640NPBF		42,000	19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	IRF640NPBF		2		2	1 - 10 $1.55283 100 $1.55283 1000 $1.55283 10000 $1.55283	Buy Now
New Advantage Corporation	IRF640NPBF		34,000		1	1 - 10 - 100 - 1000 $1.26 10000 $1.26	Buy Now
Win Source Electronics	IRF640NPBF		164,780			1 - 10 - 100 - 1000 $0.1932 10000 $0.1656	Buy Now
Infineon Technologies AG IRF640NSTRLPBF MOSFET N-CH 200V 18A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640NSTRLPBF	Digi-Reel	18,769		1	1 $2.1 10 $1.346 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
	IRF640NSTRLPBF	Cut Tape	18,769		1	1 $2.1 10 $1.346 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
	IRF640NSTRLPBF	Reel	18,400		800	1 - 10 - 100 - 1000 $0.68629 10000 $0.58675	Buy Now
Avnet Americas	IRF640NSTRLPBF	Reel	800	18 Weeks	800	1 - 10 - 100 - 1000 $0.47726 10000 $0.46162	Buy Now
	IRF640NSTRLPBF	Ammo Pack		16 Weeks, 3 Days	1	1 $1.9 10 $1.37 100 $1.03 1000 $1.03 10000 $1.03	Buy Now
	IRF640NSTRLPBF	Reel		10 Weeks	800	1 - 10 - 100 - 1000 $0.47726 10000 $0.46162	Buy Now
Mouser Electronics	IRF640NSTRLPBF					1 $1.87 10 $1.27 100 $0.891 1000 $0.611 10000 $0.586	Get Quote
Newark	IRF640NSTRLPBF	Cut Tape	1,162		1	1 $1.9 10 $1.37 100 $1.03 1000 $1.02 10000 $1.02	Buy Now
	IRF640NSTRLPBF	Reel			800	1 - 10 - 100 - 1000 $0.769 10000 $0.692	Buy Now
RS	IRF640NSTRLPBF	Bulk			10	1 - 10 $1.33 100 $1.26 1000 $1.13 10000 $1.13	Get Quote

TME	IRF640NSTRLPBF		596		1	1 $1.447 10 $0.802 100 $0.614 1000 $0.5 10000 $0.5	Buy Now
Chip 1 Exchange	IRF640NSTRLPBF		40,414			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	IRF640NSTRLPBF	Cut Tape	1,551			1 $1.24 10 $0.91 100 $0.783 1000 $0.469 10000 $0.469	Buy Now
EBV Elektronik	IRF640NSTRLPBF		4,800	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF640NSTRLPBF		4,000		1	1 - 10 - 100 - 1000 $1.37 10000 $1.27	Buy Now
Win Source Electronics	IRF640NSTRLPBF		433,372			1 - 10 - 100 - 1000 $0.3731 10000 $0.3731	Buy Now
Vishay Siliconix IRF640SPBF MOSFET N-CH 200V 18A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640SPBF	Tube	2,985		1	1 $2.93 10 $2.93 100 $2.93 1000 $0.97851 10000 $0.88788	Buy Now
RS	IRF640SPBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.03 10000 $1.93	Get Quote
New Advantage Corporation	IRF640SPBF		11,100		1	1 - 10 - 100 - 1000 $0.8214 10000 $0.8214	Buy Now
Vishay Siliconix IRF640STRRPBF MOSFET N-CH 200V 18A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640STRRPBF	Digi-Reel	1,461		1	1 $3.77 10 $2.467 100 $3.77 1000 $3.77 10000 $3.77	Buy Now
	IRF640STRRPBF	Cut Tape	1,461		1	1 $3.77 10 $2.467 100 $3.77 1000 $3.77 10000 $3.77	Buy Now
	IRF640STRRPBF	Reel	800		800	1 - 10 - 100 - 1000 $1.34181 10000 $1.34181	Buy Now
Vishay Siliconix IRF640PBF MOSFET N-CH 200V 18A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640PBF	Bulk	1,016		1	1 $2.73 10 $2.73 100 $2.73 1000 $0.89838 10000 $0.80312	Buy Now
RS	IRF640PBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.08 10000 $1.98	Get Quote
Bristol Electronics	IRF640PBF		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IRF640 Datasheets (106)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF640	Fairchild Semiconductor	18A, 200V, 0.180 ?, N-Channel Power MOSFETs	Original	PDF
IRF640	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF640	Intersil	18A, 200V, 0.180 ?, N-Channel Power MOSFETs	Original	PDF
IRF640	On Semiconductor	Power Field Effect Transistor	Original	PDF
IRF640	Philips Semiconductors	N-channel TrenchMOS transistor	Original	PDF
IRF640	STMicroelectronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220	Original	PDF
IRF640	STMicroelectronics	N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET	Original	PDF
IRF640	STMicroelectronics	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
IRF640	STMicroelectronics	N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP	Original	PDF
IRF640	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF640	FCI	POWER MOSFETs	Scan	PDF
IRF640	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF640	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF640	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF

IRF640	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF640	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF640	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB	Scan	PDF
IRF640	Motorola	Switchmode Datasheet	Scan	PDF
IRF640	Motorola	European Master Selection Guide 1986	Scan	PDF
IRF640	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRF640 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF640 applications note Abstract: IRF640 circuit Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit	PDF
IRF640 Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco	PDF
MOSFET 640N Abstract: IRF640NS irf640* spice irf640n circuit using irf640n Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n	PDF
irf640 Abstract: IRF640FP IRF640 P CHANNEL MOSFET Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET	PDF
irf640 Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)	Original	IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF	PDF
IRF640PBF Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3 Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3	PDF
IRF640B Abstract: irfs640b IRF series Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF640B/IRFS640B IRF640B irfs640b IRF series	PDF
IRF640 Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■	Original	IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco	PDF
IRF640 Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97 Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■	Original	IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97	PDF
Untitled Abstract: No abstract text available Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
irf640 Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET	PDF
irf1010e equivalent Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N	Original	O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent	PDF
irf7309 Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964 Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S	Original	OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A 150L10A DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964	PDF

irf640 Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm	PDF
AN-994 Abstract: IRF640NL IRL3103L Text: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET	Original	IRF640NPbF IRF640NSPbF IRF640NLPbF O-220 O-220AB AN-994. AN-994 IRF640NL IRL3103L	PDF
IRF640 applications note Abstract: IRF640 circuit IRF640 n-channel MOSFET Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET	PDF
irf6401 Abstract: IRF640R IRF642R 640r IFIF643R IRF641R IRF643R Text: Rugged Power M OSFETs_ IRF640R, IRF641R, IRF642R, IRF643R File Num ber 2010 Avalanche Energy Rated N-Channel Power MOSFETs 1 6 A a n d rDs on N -C H A N N E L E N H A N C E M E N T M O D E 18A , 2 0 0 V , 1 5 0 V = 0 .1 8 0 a n d 0 .2 2 0	OCR Scan	IRF640R, IRF641R, IRF642R, IRF643R 92CS-42658 IRF642R IFIF643R F640R irf6401 IRF640R 640r IRF641R IRF643R	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRF640/641 IRF640 IRF641	PDF
IRF 260 N Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n Text: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY	OCR Scan	641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n	PDF
Untitled Abstract: No abstract text available Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A	OCR Scan	IRF640, IRF640S IRF640 T0220AB) IRF640S OT404	PDF
motorola irf640 Abstract: 643 lt IRF 640 mosfet IRF640 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 IRF641 IRF642 IRF643 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM OS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid	OCR Scan	IRF640 IRF641 IRF642 IRF643 IRF640, IRF642, motorola irf640 643 lt IRF 640 mosfet IRF640 mosfet	PDF
IRF640FI Abstract: GC525 Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY	OCR Scan	IRF640 IRF640FI O-220 ISOWATT220 IRF640FI IRF640/FI ISOWATT22Q GC525	PDF
Untitled Abstract: No abstract text available Text: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	OCR Scan	IRF640, RF1S640SM 180i2	PDF

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Infineon Technologies AG IRF640NPBF

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IRF640 Datasheets (106)

IRF640 Datasheets Context Search

IRF640 applications note

IRF640

MOSFET 640N

irf640

irf640

IRF640PBF

IRF640B

IRF640

IRF640

Untitled

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irf640

irf1010e equivalent

irf7309

irf640

AN-994

IRF640 applications note

irf6401

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IRF 260 N

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motorola irf640

IRF640FI

Untitled