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    A2ND

    Abstract: No abstract text available
    Text: JEDEC STANDARD Marking, Symbols, and Labels for Identification of Lead Pb Free Assemblies, Components, and Devices JESD97 MAY 2004 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and


    Original     		PDF JESD97 A2ND

    VUI72-16NO1

    Abstract: VUI72 vui72-16 JESD97 VUM25-05E vui7216no1 VUI72-16N VUI72-1 JESD-97 D-68623
    Text: Product Change Notice PCN No.: 01/05 Customer: all IXYS product type: Package: V1-Pack Description of change: Conversion of the pin hot dip plating from PbSn to Pb-free SnAg3Cu0.5 (e1, JESD97) without undercoat Reason for change: RoHS directive 2002/95/EC


    Original     		PDF JESD97) 2002/95/EC 14F12 VBE20-20NO1 VHFD16/29/37-08/12/14/16io1 VUB72-12/16NO1 VUE30-12NO1 VUE50-12NO1 VUI30-12N1 VUI72-16NO1 VUI72-16NO1 VUI72 vui72-16 JESD97 VUM25-05E vui7216no1 VUI72-16N VUI72-1 JESD-97 D-68623

    JESD097

    Abstract: JESD97 JEDEC J-STD-020 hpc capacitor HPC0402B0R5AGMT1
    Text: Statement of RoHS Compliance/Lead-free Status REFERENCE: RoHS, Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment, JEDEC STD 097, JESD97, dated May 2004 Moisture/Reflow Sensitivity Classification…., JEDEC J-STD 020


    Original     		PDF JESD97, CE/2005/73855, HPC0402A0R5AXMT1 HPC0402B0R5AGMT1 HPC0402A0R5AWMT 1/20th J-STD-020C JESD097 JESD97 JEDEC J-STD-020 hpc capacitor HPC0402B0R5AGMT1

    JESD97

    Abstract: ILCX15 i321 ILCX09 ILCX17 ISM72 diode i321 i203 transistor IL3S HC49USM
    Text: ILSI America 5458 Louie Lane Reno, NV 89511 775-851-8880 12/14/2006 Pb Free Road Map ILSI America Part Number Series Pb Free Status RoHS Compliance Note Date code of conversion to Pb Free MSL JESD97 HC49USM HC49USM2 HC49USM3 HC49USM5 HC49USM4 HC49USM6 HC49USM8


    Original     		PDF JESD97 HC49USM HC49USM2 HC49USM3 HC49USM5 HC49USM4 HC49USM6 HC49USM8 HC49USM9 ILCX03 JESD97 ILCX15 i321 ILCX09 ILCX17 ISM72 diode i321 i203 transistor IL3S HC49USM

    JESD97

    Abstract: EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh
    Text: Marking Insulator Material Terminal Plating Terminal Material Maximum ABB105DHHN N/A ABB105DHHN Y N JESD97 JESD97 1 260 Deg. C Max 2 Minutes Max.; 3X +150 Deg. C Beryllium Copper Contact Surface: .000010" Gold; Termination: .000100" Pure Tin-Matte PPS ABB40DHHD


    Original     		PDF ABB105DHHN JESD97 ABB40DHHD ABB92DHRN-S329 JESD97 EBA06DRTN-S23 ABC60DRTN-S99 ANB10DHRN EZM24DRYH AMM12DRZH EZM24DSEH EZC12DREI BF64ABT emc10drmh

    D150*h02l

    Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
    Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark


    Original     		PDF STD150NH02L-1 STD150NH02L STD150NH02L STD150NH02L-1 D150*h02l D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l

    m1 250c fuse

    Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
    Text: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation


    Original     		PDF 32-bit 9166D-AVR m1 250c fuse at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050

    ipc 840

    Abstract: JEDEC J-STD-033 JESD97 J-STD-020 J-STD-033
    Text: PRODUCT DATA SHEET P7608 Family HIGH POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant High Current (to 30A) Low DCR (to 1mΩ) Foil windings Closed magnetic circuit DC-DC Converters


    Original     		PDF P7608 with60 P7608- J-STD-033 J-STD-020 FIN-03101, ipc 840 JEDEC J-STD-033 JESD97

    0603 footprint IPC

    Abstract: 33 1004 0605 INDUCTOR 0705-180M
    Text: PRODUCT DATA SHEET P7607 Family SHIELDED POWER INDUCTOR Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Lead-free Pb-free RoHS compliant Magnetic Shielding High Current (to 5A) Low DCR (to 19mΩ) Low profile (2.5 - 5mm) Wide range (1µH – 1000µH)


    Original     		PDF P7607 J-STD-033 J-STD-020 FIN-03101, 0603 footprint IPC 33 1004 0605 INDUCTOR 0705-180M

    AT91SAM3U4

    Abstract: at91sam3 1N1308 MAR 735 REGULATOR IC 7912 pin identify AT91SAM3U4E SAM3u1 AT91SAM3U 3961 G.E 0x20180
    Text: Features • Core • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 96 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Memories – From 64 to 256 Kbytes embedded Flash, 128-bit wide access, memory accelerator,


    Original     		PDF 128-bit 6430F 21-Feb-12 AT91SAM3U4 at91sam3 1N1308 MAR 735 REGULATOR IC 7912 pin identify AT91SAM3U4E SAM3u1 AT91SAM3U 3961 G.E 0x20180

    Untitled

    Abstract: No abstract text available
    Text: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct


    Original     		PDF STE30NK90Z

    EEPROM

    Abstract: M93C86
    Text: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W


    Original     		PDF M93C86, M93C76, M93C66 M93C56, M93C46 16-bit M93Cx6 M93Cx6-W M93Cx6-R EEPROM M93C86

    STMicroelectronics

    Abstract: op07 op07 equivalent op07 equivalent single supply OP07CN t2d5
    Text: OP07 Very low offset single bipolar operational amplifier Features • Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drift: 0.5µV/°C ■ Ultra stable with time: 2µV/month max. ■ Wide supply voltage range: ±3V to ± 22V


    Original     		PDF 00V/mV) OP07C STMicroelectronics op07 op07 equivalent op07 equivalent single supply OP07CN t2d5

    tray data for lga16

    Abstract: No abstract text available
    Text: LIS244AL MEMS motion sensor: 2-axis - ±2g ultracompact linear accelerometer Features • Single voltage supply operation ■ ± 2g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset


    Original     		PDF LIS244AL 10000g) LIS244AL tray data for lga16

    Z117

    Abstract: X117 LIS331AL LIS331ALTR
    Text: LIS331AL MEMS inertial sensor: 3-axis - ±2g analog output “nano” accelerometer Features • Single voltage supply operation ■ ±2.0g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset


    Original     		PDF LIS331AL 10000g) LIS331AL Z117 X117 LIS331ALTR

    Untitled

    Abstract: No abstract text available
    Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l


    Original     		PDF M74HC09 DIP-14 SO-14 M74HC09

    f25nm60n

    Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
    Text: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application


    Original     		PDF STB25NM60Nx STF25NM60N STP25NM60N STW25NM60N O-220, O-220FP, O-247 STB25NM60N STB25NM60N-1 f25nm60n P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n

    2ST5949

    Abstract: 0015923C
    Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct Application ■ 1 u d o 2r P e Audio power amplifier


    Original     		PDF 2ST5949 2ST2121 2ST5949 0015923C

    GCM 38112

    Abstract: Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S
    Text: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation


    Original     		PDF 32-bit 51DMIPS/MHz 92DMIPS 66MHz 36MHz 256KBytes, 128KBytes, 64KBytes 32072D04/2011 GCM 38112 Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S

    LD1117

    Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
    Text: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,


    Original     		PDF LD1117 O-220 OT-223 800mA LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33

    st 339

    Abstract: JESD97 SSOP28 SSOP-28 ST3243E TSSOP28 15KV
    Text: ST3243E ±15KV ESD protected 3 to 5.5V, 400Kbps, RS-232 Transceiver with auto-powerdown General features • ESD protection for RS-232 I/O pins: – ±8kV IEC 1000-4-2 contact discharge – ±15kV human body model ■ 1µA supply current achieved when in autopowerdown


    Original     		PDF ST3243E 400Kbps, RS-232 250Kbps EIA/TIA-232 SO-28, SSOP-28, TSSOP28 flip-chip28 st 339 JESD97 SSOP28 SSOP-28 ST3243E 15KV

    st 2904

    Abstract: lm2904 2904Y diode k403 lm2904 so MARKING k403
    Text: LM2904 Low power dual operational amplifier Features • Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth unity gain : 1.1MHz (temperature compensated) ■ Very low supply current/op (500µA) essentially independent of supply voltage


    Original     		PDF LM2904 100dB st 2904 lm2904 2904Y diode k403 lm2904 so MARKING k403

    ISOWATT218FX

    Abstract: HD1530FX ecopack JESD97
    Text: HD1530FX High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING


    Original     		PDF HD1530FX ISOWATT218FX ISOWATT218FX HD1530FX ecopack JESD97

    Untitled

    Abstract: No abstract text available
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3


    Original     		PDF STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247