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    IRFZ40 Search Results

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    IRFZ40 Price and Stock

    Vishay Siliconix IRFZ40PBF

    MOSFET N-CH 60V 50A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFZ40PBF Tube 2,232 1
    • 1 $2.78
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    • 100 $2.78
    • 1000 $1.12076
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    RS IRFZ40PBF Bulk 1,000
    • 1 -
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    • 1000 $2.38
    • 10000 $2.26
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    Quest Components IRFZ40PBF 167
    • 1 $1.5
    • 10 $1.5
    • 100 $0.9
    • 1000 $0.81
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    IRFZ40PBF 4
    • 1 $2.2456
    • 10 $1.6842
    • 100 $1.6842
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    Vishay Siliconix IRFZ40

    MOSFET N-CH 60V 50A TO220AB
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    DigiKey IRFZ40 Tube
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    Bristol Electronics IRFZ40 650
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    Quest Components IRFZ40 520
    • 1 $2.2
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    • 1000 $1.0175
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    Vishay Siliconix IRFZ40PBF-BE3

    MOSFET N-CH 60V 50A TO220AB
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    DigiKey IRFZ40PBF-BE3 Tube 1
    • 1 $3.48
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    • 1000 $1.1945
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    Vishay Intertechnologies IRFZ40PBF

    MOSFET N-CHANNEL 60V - Bulk (Alt: IRFZ40PBF)
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    Avnet Americas IRFZ40PBF Bulk 2,000 12 Weeks 1
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    IRFZ40PBF Bulk 18 Weeks, 1 Days 1
    • 1 $1.43
    • 10 $1.73
    • 100 $1.54
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    Mouser Electronics IRFZ40PBF 854
    • 1 $2.32
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    Newark IRFZ40PBF Bulk 907 1
    • 1 $1.54
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    RS IRFZ40PBF Bulk 1,000
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    TTI IRFZ40PBF Tube 500 50
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    EBV Elektronik IRFZ40PBF 13 Weeks 50
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    Vishay Intertechnologies IRFZ40PBF-BE3

    MOSFETs TO220 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRFZ40PBF-BE3 3,117
    • 1 $2.57
    • 10 $1.77
    • 100 $1.4
    • 1000 $1.12
    • 10000 $1.1
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    Newark IRFZ40PBF-BE3 Bulk 1,000
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    • 1000 $1.38
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    TTI IRFZ40PBF-BE3 Tube 1,000
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    IRFZ40 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFZ40 Cypress Semiconductor 256K x 32 Static RAM Module Original PDF
    IRFZ40 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRFZ40 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRFZ40 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ40 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO220AB Original PDF
    IRFZ40 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRFZ40 Motorola Switchmode Datasheet Scan PDF
    IRFZ40 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFZ40 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFZ40 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFZ40 Unknown FET Data Book Scan PDF
    IRFZ40 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    IRFZ40FI STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original PDF
    IRFZ40FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRFZ40FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    IRFZ40FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ40FI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFZ40PBF Vishay Semiconductors MOSFET N-CH 50V 35A TO-220AB Original PDF
    IRFZ40PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO220AB Original PDF
    IRFZ40PBF-BE3 Vishay Siliconix MOSFET N-CH 60V 50A TO220AB Original PDF

    IRFZ40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFZ40PBF

    Abstract: No abstract text available
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original
    IRFZ40, SiHFZ40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ40PBF PDF

    schematic diagram motor control

    Abstract: C5027 5027A schematic diagram motor C3519 IRFZ40 IRFZ40FI
    Text: IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 Ω - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS on ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.022 Ω


    Original
    IRFZ40 IRFZ40FI O-220/ISOWATT220 ISOWATT220 O-220 schematic diagram motor control C5027 5027A schematic diagram motor C3519 IRFZ40 IRFZ40FI PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original
    IRFZ40, SiHFZ40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    C3519

    Abstract: IRFZ40 IRFZ40FI
    Text: IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original
    IRFZ40 IRFZ40FI 100oC 175oC O-220 ISOWATT220 C3519 IRFZ40 IRFZ40FI PDF

    C5027

    Abstract: C3519 IRFZ40 IRFZ40FI
    Text: IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original
    IRFZ40 IRFZ40FI 100oC 175oC O-220 ISOWATT220 C5027 C3519 IRFZ40 IRFZ40FI PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    VBG15NB37

    Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


    Original
    O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L VBG15NB37 STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L PDF

    IRFZ40PBF

    Abstract: IRFZ40 SiHFZ40 SiHFZ40-E3 marking 0936
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25


    Original
    IRFZ40, SiHFZ40 2002/95/EC O-220 18-Jul-08 IRFZ40PBF IRFZ40 SiHFZ40-E3 marking 0936 PDF

    IRFZ40

    Abstract: SiHFZ40 SiHFZ40-E3
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original
    IRFZ40, SiHFZ40 2002/95/EC O-220AB 11-Mar-11 IRFZ40 SiHFZ40-E3 PDF

    IRFZ40

    Abstract: IRFZ40FI
    Text: IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 Ω - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS on ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.022 Ω


    Original
    IRFZ40 IRFZ40FI O-220/ISOWATT220 O-220 ISOWATT220 IRFZ40 IRFZ40FI PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original
    IRFZ40, SiHFZ40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY


    OCR Scan
    Q045752 IRFZ40 IRFZ40FI O-220 ATT220 IRFZ40/FI PDF

    IRFZ44

    Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
    Text: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    IRFZ44/45 IRFZ40/42 IRFZ44 IRFZ45 IRFZ40 IRFZ42 IRFZ44 mosfet IRFZ44 MOSFETs IRFz44 n-channel MOSFET PDF

    1rfz42

    Abstract: No abstract text available
    Text: 3 DE D / 3 T S G • S - 7 ^ 5 3 7 T t i O M S ODB^flM1^ 5 O IRFZ40 1RFZ42 N 7 Ib a 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDss ^DS on IRFZ40 50 V 0.028 ß 35 A IRFZ42 50 V 0.035 fi 35 A . VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan
    IRFZ40 1RFZ42 IRFZ42 T-39-13 1rfz42 PDF

    IRFZ40

    Abstract: irfz42 IRFZ42N
    Text: SCS-THOMSON IRFZ40 IRFZ42 [ * Q m i ( M ( 0M (g s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on 'd IRF240 50 V 0.028 ß 35 A IRF242 50 V 0.035 Q 35 A . VER YLO W RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO


    OCR Scan
    IRFZ40 IRFZ42 IRF240 IRF242 irfz42 IRFZ42N PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure


    OCR Scan
    IRFZ44/45 IRFZ40/42 QD124SD IRFZ44 IRFZ40 IRFZ45 GQ12454 PDF

    ra 220 diode

    Abstract: No abstract text available
    Text: SGS-THOMSON !M Œ » IO T q K S IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F Z 4 0 IR F Z 4 0 F I V dss 50 V 50 V R lo d S ( oh ) 0 .0 2 8 n 0 .0 2 8 Q 50 A 27 A . . • . ■ . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan
    IRFZ40 IRFZ40FI O-220 ISOWATT220 IRFZ40/FI GC37000 ra 220 diode PDF

    BU271

    Abstract: IRF540 24334 FSN0920
    Text: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A


    OCR Scan
    O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920 PDF

    SSP60N06

    Abstract: irf630 irf640 SSP50N06 ssp15n06
    Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520


    OCR Scan
    O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06 PDF

    8 pin ic 9435A

    Abstract: 9435a 9435A transistor c442 diode c446 transistor irfz40 RFZ4 diode c446 9435a mosfet IRFZ42N
    Text: HE D I ^<355452 OQQôtilE 3 | Data Sheet No. PD-9.435A INTERNATIONAL R E C T IF IE R T-39-13 I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 IRFZ42 N -C h a n n e l 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.028 Ohm HEXFET


    OCR Scan
    T-39-13 IRFZ40 IRFZ42 T0-220AB T-39-13 C-446 8 pin ic 9435A 9435a 9435A transistor c442 diode c446 transistor RFZ4 diode c446 9435a mosfet IRFZ42N PDF

    z40 mosfet

    Abstract: IRFZ42 IRFZ40 221A-04
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r F ie ld E f f e c t T ra n s is to rs N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S T h e « TMOS Power fETa ore designed for lo w voltage. hlQfi «peed power v»MK:hlr>3 Bppilcntlon* such as switching


    OCR Scan
    IRFZ40 IRFZ42 21A-04 O-22CAB z40 mosfet IRFZ42 221A-04 PDF

    50N05E

    Abstract: TP50N05E POWER MOSFET irfz40
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r Field E ffe c t T ra n s is to rs N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM OS Pow er FETs are designed fo r lo w voltage, h ig h speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g


    OCR Scan
    IRFZ40 IRFZ42 IRFZ40. 50N05E TP50N05E POWER MOSFET PDF

    IRFZ42

    Abstract: No abstract text available
    Text: / 3 T IR F Z 4 0 [j^ D Ë ^ tlIL tiC T M D g i_ IR F Z 4 2 S G S -T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRFZ40 50 V 0.028 IRFZ42 50 V 0.035 fi fi Id 35 A 35 A • VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan
    IRFZ40 IRFZ42 IRFZ42 PDF

    irfz44

    Abstract: No abstract text available
    Text: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s i o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input cap acitance Extended safe operating area Improved high tem perature reliability


    OCR Scan
    IRFZ44/45 IRFZ40/42 irfz44 PDF