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Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFZ40PBF Abstract: No abstract text available Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ40PBF
Untitled Abstract: No abstract text available Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFZ40PBF Abstract: IRFZ40 SiHFZ40 SiHFZ40-E3 marking 0936 Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220 18-Jul-08 IRFZ40PBF IRFZ40 SiHFZ40-E3 marking 0936
IRFZ40 Abstract: SiHFZ40 SiHFZ40-E3 Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220AB 11-Mar-11 IRFZ40 SiHFZ40-E3
Untitled Abstract: No abstract text available Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	PDF	IRFZ40, SiHFZ40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
AN609 Abstract: IRFZ40 SiHFZ40 147381 SiHFZ Text: IRFZ40_RC, SiHFZ40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFZ40 SiHFZ40 AN609, 1481m 7162m 7438m 2295m 4509m 8037m 4060m AN609 147381 SiHFZ