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    Z11A Search Results

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    Z11A Price and Stock

    Vishay Semiconductors TLZ11A-GS08

    DIODE ZENER 11V 500MW SOD80
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    DigiKey TLZ11A-GS08 Reel 12,500 2,500
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    TLZ11A-GS08 Cut Tape 12,500 1
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    TLZ11A-GS08 Digi-Reel 12,500 1
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    Diodes Incorporated DDZ11ASF-7

    DIODE ZENER 10.45V 500MW SOD323F
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    DigiKey DDZ11ASF-7 Cut Tape 5,028 1
    • 1 $0.11
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    DDZ11ASF-7 Digi-Reel 5,028 1
    • 1 $0.11
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    DDZ11ASF-7 Reel 3,000 3,000
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    Avnet Americas DDZ11ASF-7 Reel 8 Weeks 3,000
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    Mouser Electronics DDZ11ASF-7 4,561
    • 1 $0.11
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    Newark DDZ11ASF-7 Cut Tape 2,980 5
    • 1 $0.114
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    Bristol Electronics DDZ11ASF-7 4,300
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    TME DDZ11ASF-7 1
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    Avnet Silica DDZ11ASF-7 3,000 10 Weeks 3,000
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    Panasonic Electronic Components EX-Z11A

    SENSOR THROUGH-BEAM 50MM NPN
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    DigiKey EX-Z11A Box 263 1
    • 1 $98
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    Mouser Electronics EX-Z11A 3
    • 1 $98
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    RS EX-Z11A Bulk 10 Weeks 1
    • 1 $98.98
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    Onlinecomponents.com EX-Z11A 10
    • 1 $97.51
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    TME EX-Z11A 1
    • 1 $111.06
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    Master Electronics EX-Z11A 10
    • 1 $97.51
    • 10 $87.34
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    PEI Genesis 8D519Z11AA

    8D 11C 11#16 PIN PLUG
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    DigiKey 8D519Z11AA Bulk 31 1
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    Panasonic Electronic Components EX-Z11A-P

    SENSOR THROUGH-BEAM 50MM PNP
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    DigiKey EX-Z11A-P Box 6 1
    • 1 $98
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    Mouser Electronics EX-Z11A-P 3
    • 1 $98
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    • 1 $98
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    Onlinecomponents.com EX-Z11A-P
    • 1 $94.84
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    TME EX-Z11A-P 2 1
    • 1 $111.06
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    Master Electronics EX-Z11A-P
    • 1 $94.84
    • 10 $85.22
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    Find more Z11A price and stock on Findchips.com

    Z11A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Z11A Shenzhen Yongerjia Electronic Zener Diode Original PDF

    Z11A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B PDF

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A PDF

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B PDF

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 28rola, PDF

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A PDF

    z18a

    Abstract: No abstract text available
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, z18a PDF

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374/D MRF374 MRF374/D RO3010 C14A z14b PDF

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original     		GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj PDF

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2 PDF

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b PDF

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original     		500mW 94Leakage marking 6a2 smd zener Z11B PDF

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b PDF

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 PDF

    z9b1

    Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 z9b1 Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D PDF

    EW457P5000

    Abstract: EW1700BM6500 M38T-A10 HC60N HONEYWELL MODULATing valve EW9106AFZ001 ML7420A6009 ML7420A6025 M6061A VSMF-420-2
    Text: Product catalog ACS Environmental Controls Honeywell Srl ACS Environmental Controls Via Philips, 12 20052 Monza Telefono: +39 039 2165.1 Email: info@honeywell.it Honeywell ΕΠΕ ACS Environmental Controls Πολυτεχενείου, 25 14122, Νέο Ηράκλειο


    Original     		KSW24 KSW230 UK3B-0007IT0H-R0713 EW457P5000 EW1700BM6500 M38T-A10 HC60N HONEYWELL MODULATing valve EW9106AFZ001 ML7420A6009 ML7420A6025 M6061A VSMF-420-2 PDF

    Z22a

    Abstract: D74HA3.7A-C SZA51A
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, Z22a D74HA3.7A-C SZA51A PDF

    Z18B

    Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
    Text: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2 PDF

    BUZ11A

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N * 7 /, « œ i L I ï ï [ M ] 0 S§ B U Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS(on Z11A 50 V 0.06 fi 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan     		BUZ11A 00A///S BUZ11A PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20 PDF

    c5353

    Abstract: Z11A
    Text: SGS-THOMSON IDOS Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Z11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY


    OCR Scan     		BUZ11A BUZ11A O-220 C23A90 C53530 c5353 Z11A PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    ecg rectifier diode

    Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
    Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060


    OCR Scan     		1N415C 1N415E 1N416C 1N416E ECG553 ECG566A ECG571 ECG616A Z13-2 DO-92 ecg rectifier diode ECG 558 ECG diodes diode ecg 588 ECG555A 110MP PDF

    3055e

    Abstract: SI9959 4P05 si9943 SI9945 69COM 2406M 25n05l s42d TP5N
    Text: f i S ilico n i x Replacement Guide A M e m b e r o f th e T e m ic G ro u p LITTLE FOOT Replacement Guide P a rt N um ber C onfiguration Vds V D ata Sheet Page # r DS(on) (52) VGS = 10 V P-C hannel M OSFETs O n e Si9400 m ay rep la c e o n e o f th e following:


    OCR Scan     		Si9400 9400D 9405D 9407DY 9430D 9435D 3055E Si9959 9959D Si9940D 4P05 si9943 SI9945 69COM 2406M 25n05l s42d TP5N PDF