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    Z13A Search Results

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    Z13A Price and Stock

    Diodes Incorporated DDZ13ASF-7

    DIODE ZENER 12.43V 500MW SOD323F
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    DigiKey DDZ13ASF-7 Digi-Reel 15,965 1
    • 1 $0.12
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    DDZ13ASF-7 Cut Tape 15,965 1
    • 1 $0.12
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    DDZ13ASF-7 Reel 12,000 3,000
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    Mouser Electronics DDZ13ASF-7 5,507
    • 1 $0.12
    • 10 $0.082
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    Newark DDZ13ASF-7 Cut Tape 2,930 5
    • 1 $0.208
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    TME DDZ13ASF-7 1
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    • 100 $0.1864
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    Avnet Silica DDZ13ASF-7 3,000 10 Weeks 3,000
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    Vishay Semiconductors TLZ13A-GS08

    DIODE ZENER 13V 500MW SOD80
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    DigiKey TLZ13A-GS08 Reel 10,000 2,500
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    PanJit Group 1SMB3EZ13-AU_R1_000A1

    DIODE ZENER 13V 3W DO214AA
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    DigiKey 1SMB3EZ13-AU_R1_000A1 Reel 800 800
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    1SMB3EZ13-AU_R1_000A1 Cut Tape 456 1
    • 1 $0.49
    • 10 $0.377
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    Panasonic Electronic Components EX-Z13A

    SENSOR THROUGH-BEAM 500MM NPN
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    DigiKey EX-Z13A Box 3 1
    • 1 $98
    • 10 $89.091
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    Mouser Electronics EX-Z13A 6
    • 1 $98
    • 10 $88.2
    • 100 $84.28
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    RS EX-Z13A Bulk 30 10 Weeks 1
    • 1 $108.02
    • 10 $100.45
    • 100 $96.13
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    Onlinecomponents.com EX-Z13A
    • 1 $102.48
    • 10 $92.09
    • 100 $84.72
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    TME EX-Z13A 1
    • 1 $110.07
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    Master Electronics EX-Z13A
    • 1 $102.48
    • 10 $92.09
    • 100 $84.72
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    Panasonic Electronic Components EX-Z13A-P

    SENSOR THROUGH-BEAM 500MM PNP
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    DigiKey EX-Z13A-P Box 3 1
    • 1 $98
    • 10 $89.091
    • 100 $89.091
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    Mouser Electronics EX-Z13A-P
    • 1 $98
    • 10 $88.2
    • 100 $84.28
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    Onlinecomponents.com EX-Z13A-P
    • 1 $102.48
    • 10 $92.09
    • 100 $84.72
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    TME EX-Z13A-P 2 1
    • 1 $108.63
    • 10 $95.69
    • 100 $95.69
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    Master Electronics EX-Z13A-P
    • 1 $102.48
    • 10 $92.09
    • 100 $84.72
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    Find more Z13A price and stock on Findchips.com

    Z13A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Z13A Shenzhen Yongerjia Electronic Zener Diode Original PDF

    Z13A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B PDF

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A PDF

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B PDF

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 28rola, PDF

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A PDF

    z18a

    Abstract: No abstract text available
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, z18a PDF

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374/D MRF374 MRF374/D RO3010 C14A z14b PDF

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original     		GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj PDF

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2 PDF

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b PDF

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original     		500mW 94Leakage marking 6a2 smd zener Z11B PDF

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b PDF

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 PDF

    z9b1

    Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 z9b1 Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D PDF

    Z22a

    Abstract: D74HA3.7A-C SZA51A
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, Z22a D74HA3.7A-C SZA51A PDF

    Z18B

    Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
    Text: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2 PDF

    zener diode z15c

    Abstract: diode z6A2 Z18B Z5B6 z6c8
    Text: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 MAXIM00mW 300K/W zener diode z15c diode z6A2 Z18B Z5B6 z6c8 PDF

    C13B

    Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w PDF

    Z22A

    Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
    Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


    Original     		GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z22A Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b PDF

    EGP300

    Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
    Text: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B


    OCR Scan     		D0-Z13AA 204AL D0-204AP UF4005# UF4006# UF4007# BYV26D BYV26E EGL34C EGL34D EGP300 FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT PDF

    Z13A

    Abstract: GT-CM800L
    Text: UNCONTROLLED DOCUMENT REV, A B C PART NUMBER REV. GT-CM800L c E.C.N. NUMBER AND REVISION COMMENTS UPDATED WHERE SPECIFIED E.C.N. # 1 OBRDR & REDRAWN E.C.N. # 1 1 1 4 8 . DATE a - 1 3 -9 3 3 -2 7 -0 0 12.12.06 ELECTRICAL SPECIFICATIONS £5.00 [0.984] CO.3 0 7 ]


    OCR Scan     		GT-CM800L S-13-93 11D0V 103MQ 10DV/S) 150mS 10OVDC) DECL05DRE Z13A GT-CM800L PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 H # 1992 V P54/74FCT646T/AT/CT — P54/74FCT648T/AT/CT OCTAL TRANSCEIVER/REGISTER FEATURES • Function, Pinout and Drive Compatible w ith the FCT and F Logic Power-off disable feature Matched Rise and Fall tim es ■ FCT-C speed at 5.4ns max. Com'l FCT-A speed at 6.3ns max. (Com'l)


    OCR Scan     		P54/74FCT646T/AT/CT P54/74FCT648T/AT/CT MIL-STD-883, 646AT 646CT 648AT 648CT PDF

    204B

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. GT— C M 3230L D E.C.N . NUMBER AND REVISION COMMENTS 1 0 -1 8 -9 6 E.C.N . #10BRD R. Sc REDRAWN. E.C .N . # 1 0 9 1 2 . 3 -2 8 -0 0 C D E.C.N . # 1 1 1 4 8 . PARAMETER CERAMIC TU BE G2D.C. FIRING VOLTAGE: E LE C T R D D E


    OCR Scan     		CM3230L 10BRDR. 8/20jjS) 10/100DuS 100VDâ CM323DL DECL05DRE 204B PDF

    204B

    Abstract: 1u5c
    Text: UNCONTROLLED DOCUMENT REV, E.C.N. PART NUM BER REV. GT— CM3230L c NUM BER AND REVISION COMMENTS 1 0 -1 8 -9 6 B E.C.N. # 10BR D R . Sc REDRAWN. 3 -2 8 -0 0 C E .C .N . # 1 0 9 1 2 . 9 ,2 3 .0 2 ELECTRICAL SPECIFICATIONS 11.20 [0 .4 41] E PARAMETER C ER AM IC T U B E


    OCR Scan     		CM3230L 10BRDR. 8/20jjS) 10/100DuS 100VDC) CM323DL DECL05DRE 204B 1u5c PDF