Z14b
Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF374/D
MRF374
Z14b
Z10A
Z12B
Z10B
z11b
r1a transistor
C14A
RO3010
C12A
C12B
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RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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marking c14a
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
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MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372/D
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RO30
Abstract: mrf374
Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO30
mrf374
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MRF372
Abstract: C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372R5
MRF372
C14A
MRF372R5
transmitter 446 mhz
TRANSISTOR 1003
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C14A
Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372/D
MRF372
C14A
MRF372
R5B transistor
C10A
473 coilcraft d
j937
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C14A
Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
C14A
MRF374A
C12A
C12B
C13B
MRF374
RO3010
j310 vishay
J352
100WPEP
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DM-3110
Abstract: Io20S XM-3401 RO-5031E TEAC FLOPPY CDU-8012 B290X-UNI CD-150 XM-3301 SQ5110
Text: ZPCSCSI0ZDP CPS DC-9062-00 CUSTOMERPROCUREMENTSPECIFICATION ZPCSCSI0ZDP PCMCIASCSIADAPTEREVALUATIONKIT GENERAL DESCRIPTION SCSI DRIVER SPECIFICATIONS The ZPCSCSI0ZDP is an evaluation kit for Zilog's PCMCIA SCSI adapter solution, available for OEM license and
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DC-9062-00
Z53C8003FSC1746
Z8601720ASC
Z53C8003FSC1746,
Z8601720ASC
DM-3110
Io20S
XM-3401
RO-5031E
TEAC FLOPPY
CDU-8012
B290X-UNI
CD-150
XM-3301
SQ5110
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
transistor R1A 37
5233 mosfet
J146
VJ1210y
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374
28rola,
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DM-3110
Abstract: XM-3401 CD150 Io20S RO-5031E XM-4101 CDR-510 9200e DM-3024 hp 3101 pin
Text: ZPCSCSI0ZDP CPS DC-9062-00 ZILOG CUSTOMER PROCUREMENT SPECIFICATION ZPCSCSI0ZDP PCMCIA SCSI ADAPTER EVALUATION KIT GENERAL DESCRIPTION SCSI DRIVER SPECIFICATIONS The ZPCSCSI0ZDP is an evaluation kit for Zilog's PCMCIA SCSI adapter solution, available for OEM license and
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DC-9062-00
Z53C8003FSC1746
Z8601720ASC
Z53C8003FSC1746,
Z8601720ASC
DM-3110
XM-3401
CD150
Io20S
RO-5031E
XM-4101
CDR-510
9200e
DM-3024
hp 3101 pin
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marking c14a
Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
MRF374A
marking c14a
ATC - Semiconductor Devices
transistor j239
04 6274 045 000 800
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z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
z14b
RO3010
C14A
C12A
C12B
C13B
MRF374
r1a transistor
VJ2225Y
Z14A
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RO3010
Abstract: C14A z14b
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374/D
MRF374
MRF374/D
RO3010
C14A
z14b
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J352
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
MRF374A/D
J352
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balun 75 ohm
Abstract: C14A RO3010 MRF372 c9ab
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
balun 75 ohm
C14A
RO3010
MRF372
c9ab
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
C3B Kemet
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GSC371BAL2000
Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band
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1930MHz
FLL400IP-2
1930-1990MHz
720mA
96GHz
GSC371BAL2000
Fujitsu GaAs FET application note
GSC371-BAL2000
12v class d amplifier 40W
gaas fet vhf uhf
GSC371
soshin
RO3010
fujitsu rf power amplifier l band
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
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MMRF1013H
MMRF1013HR5
MMRF1013HSR5
MMRF1013HR5
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marking c14a
Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
marking R5b
R5B transistor
RO3010
MRF372
marking L4A
C14A
device L1a marking
L1A marking on device
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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