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    2SK295 Search Results

    2SK295 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2955-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 45A 13Mohm To-3P Visit Renesas Electronics Corporation
    2SK2958STL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 75A 7Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK2959-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 10Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK295 Price and Stock

    Renesas Electronics Corporation 2SK2958STL-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2958STL-E 3,909
    • 1 $3.756
    • 10 $3.756
    • 100 $3.756
    • 1000 $1.878
    • 10000 $1.878
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    Renesas Electronics Corporation 2SK2958STL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2958STL 397
    • 1 $3.48
    • 10 $3.48
    • 100 $3.48
    • 1000 $1.4355
    • 10000 $1.4355
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    Hitachi Ltd 2SK295

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK295 27
    • 1 $5.304
    • 10 $3.8896
    • 100 $3.536
    • 1000 $3.536
    • 10000 $3.536
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    Toshiba America Electronic Components 2SK2953

    MOSFET Transistor, N-Channel, TO-247VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2953 8
    • 1 $4.83
    • 10 $3.542
    • 100 $3.542
    • 1000 $3.542
    • 10000 $3.542
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    2SK295 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK295 Hitachi Semiconductor SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING Scan PDF
    2SK295 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK295 Unknown FET Data Book Scan PDF
    2SK295 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK2951 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2951 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK2952 Toshiba FETs - Nch 250V Original PDF
    2SK2952 Toshiba Original PDF
    2SK2952 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2952 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2952 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK2952 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2952 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator applications Scan PDF
    2SK2953 Toshiba FETs - Nch 500V Original PDF
    2SK2953 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2953 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2953 Toshiba Original PDF
    2SK2953 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2953 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF
    2SK2953(F) Toshiba 2SK2953 - MOSFETs N-Ch 600V 15A Rdson 0.4 Ohm Original PDF

    2SK295 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2952

    Abstract: 2SK2952
    Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)


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    PDF 2SK2952 k2952 2SK2952

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1


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    PDF 2SK2955 ADE-208-564B D-85622 Hitachi DSA002749

    2SK2958

    Abstract: Hitachi DSA0044
    Text: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2


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    PDF 2SK2958 ADE-208-568B Hitachi DSA0044

    K2953

    Abstract: 2SK2953
    Text: 2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2953 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.31 Ω (typ.) z High forward transfer admittance : |Yfs| = 15 S (typ.)


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    PDF 2SK2953 K2953 2SK2953

    K2953

    Abstract: 2SK2953
    Text: 2SK2953 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2953 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.31Ω (標準) z オン抵抗が低い。


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    PDF 2SK2953 10VID 2-16F1B K2953 2002/95/EC) K2953 2SK2953

    k2952

    Abstract: No abstract text available
    Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 400 V)


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    PDF 2SK2952 k2952

    Untitled

    Abstract: No abstract text available
    Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)


    Original
    PDF 2SK2952

    2SK2956-E

    Abstract: 2SK2956 PRSS0003AE-A
    Text: 2SK2956 Silicon N Channel MOS FET High Speed Power Switching REJ03G1056-0401 Previous: ADE-208-566B Rev.4.01 Apr 27, 2006 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A


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    PDF 2SK2956 REJ03G1056-0401 ADE-208-566B) PRSS0003AE-A O-220C 2SK2956-E 2SK2956 PRSS0003AE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK295 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30‚ Minimum Operating Temp (øC)


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    PDF 2SK295

    2SK2959

    Abstract: Hitachi DSA00239
    Text: 2SK2959 Silicon N Channel MOS FET High Speed Power Switching ADE-208-569C Z 4th. Edition Aug 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange


    Original
    PDF 2SK2959 ADE-208-569C 220AB 2SK2959 Hitachi DSA00239

    2SK2958

    Abstract: Hitachi DSA00239
    Text: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3


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    PDF 2SK2958 ADE-208-568B Hitachi DSA00239

    k2952

    Abstract: 2SK2952
    Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Unit: mm Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current


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    PDF 2SK2952 k2952 2SK2952

    2sk2955

    Abstract: ADE-208-564 Hitachi DSA002780
    Text: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2955 Absolute Maximum Ratings Ta = 25°C


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    PDF 2SK2955 ADE-208-564 2sk2955 Hitachi DSA002780

    567d

    Abstract: 2SK2957 Hitachi DSA0044
    Text: 2SK2957 L ,2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3


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    PDF 2SK2957 ADE-208-567D 567d Hitachi DSA0044

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance


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    PDF 2SK2953

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6916 | _ N-Channel Silicon MOSFET 1 2SK2951 ISAflYO / Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. unit : mm 2062A


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    PDF ENN6916 2SK2951 2SK2951]

    transistor 320v 1000A

    Abstract: 2SK2952
    Text: TO SH IBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2952 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR APPLICATIONS • • • • Low Drain-Source ON Resistance Rd s (ON) = 0.4 n (Typ.)


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    PDF 2SK2952 20kil) transistor 320v 1000A 2SK2952

    Untitled

    Abstract: No abstract text available
    Text: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-568B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance • = 5.5mi2 typ. 4V gate drive devices. • High speed switching R d s ( o„) Outline LDPAK 2SK2958(L),2SK2958(S)


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    PDF 2SK2958 ADE-208-568B D-85622

    2SK2953

    Abstract: N10-y
    Text: TO SH IBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


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    PDF 2SK2953 2SK2953 N10-y

    *k2952

    Abstract: 2SK2952
    Text: TOSHIBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2952 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR APPLICATIONS • Low Drain-Source ON Resistance e d s (o n )= °-4 îî


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    PDF 2SK2952 *k2952 2SK2952

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    Untitled

    Abstract: No abstract text available
    Text: 2SK2959 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-569 Target specification 1st. Edition Features • Low on-resistance Ros.om = 7m i2 typ. • 4V gate drive devices. • High speed switching Outline TO -220A B 3 1262 1. Gate 2. Drain Flange


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    PDF 2SK2959 ADE-208-569 -220A

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    2SK2953

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Sorce ON Resistance


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    PDF 2SK2953 2SK2953