0.18UM STANDARD CELL ST Search Results

0.18UM STANDARD CELL ST Result Highlights (5)

Part	Manufacturer	Description
DE6B3KJ151KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ471KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ152MN4A	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ101KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ331KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

0.18UM STANDARD CELL ST Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ARM dual port SRAM compiler Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110	PDF
TDA 9361 PS Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088 Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088	PDF
DSPG Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler Text: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler	PDF
CX5000 Abstract: CHIPX cmos ic and gates datasheet sram 200mhz 8k CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 Text: DATASHEET CX5000 0.18um Structured ASIC Product Description The 0.18um CX5000 is an ASIC that utilizes the combination of an advanced metal programmable gate array and optimized EDA system to implement high performance ASIC designs while reducing application	Original	CX5000 CX5000 CEC034 CHIPX cmos ic and gates datasheet sram 200mhz 8k CX50041 CX50101 CX50211 CX50331 CX50561 CX50841	PDF
CHIPX Abstract: CX5000 CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 CX51191 CX51761 Text: DATASHEET CX5000 0.18um Structured ASIC Product Description The 0.18um CX5000 is an ASIC that utilizes the combination of an advanced metal programmable gate array and optimized EDA system to implement high performance ASIC designs while reducing application	Original	CX5000 CX5000 CEC034 CHIPX CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 CX51191 CX51761	PDF
TAG 8939 Abstract: Flip-chip 1.8V SRAM cell phone flextronics 0.18Um Standard cell ST cmos 0.18um Text: DATA SHEET 0.18µ Standard Cell Application Flextronics Semiconductor’s 0.18µ Standard Cell product suite offer designers the best optimization for performance, low power, and system cost. Applications benefiting from these features are telecom, networking, portable datacom, and consumer applications. The product suite is well equipped for design	Original		PDF
"vlsi technology" abstract Abstract: "vlsi technology" abstract for split-gate flash Text: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China	Original	CA94086, "vlsi technology" abstract "vlsi technology" abstract for split-gate flash	PDF
microcontroller fingerprint Abstract: Cypress "USB Microcontroller" National semiconductor microcontroller IC free National semiconductor die microcontroller fingerprint application Fingerprint module Text: Trusted Solutions Business Unit Email: trusted.solutions@nsc.com Website: www.trustedfoundry.com Toll Free: 1-888-498-1618 Introducing the Unique Number Generator UNG National Semiconductor offers an option that can assign a unique number ID to each integrated circuit (IC). This feature	Original	256x1bit microcontroller fingerprint Cypress "USB Microcontroller" National semiconductor microcontroller IC free National semiconductor die microcontroller fingerprint application Fingerprint module	PDF
180-nm CMOS standard cell library inverter Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201 Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006	Original	130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201	PDF
tv tuner for laptop Abstract: portable dvd player block diagram BCM2152 BCM2722 BCM2900 DVB-T Tuner I2C program USB DVB-T 2.0 diagram mbrai portable dvd player power supply portable dvd player Text: BCM2900 DVB-H/DVB-T DUAL-BAND TUNER SUMMARY OF BENEFITS FEATURES • Multiband • UHF IV, V 470 MHz – 890 MHz • US L-band: 1670 MHz – 1675 MHz • 1450 MHz – 1490 MHz L-band • Single tuner for both bands: no need for separate ICs for different markets	Original	BCM2900 64-QAM 16-QAM 2900-PB00-R tv tuner for laptop portable dvd player block diagram BCM2152 BCM2722 BCM2900 DVB-T Tuner I2C program USB DVB-T 2.0 diagram mbrai portable dvd player power supply portable dvd player	PDF
0.18-um CMOS technology Abstract: 4318C Atmel 652 atmel 432 16Kx1 8kx2 ATU18 484 BGA pin diagram 0.18-um digital clock using gates PQFP 352 Text: Features • • • • • • • • • • • • • • • • • • • High Performance ULC Family Suitable for Latest CPLDs and FPGAs conversion Very effective associated Physical synthesis/optimization Flow From 45K Gates up to 1000K Gates Supported	Original	1000K 55Kbit 847Kbit 250Mhz 4318C 0.18-um CMOS technology Atmel 652 atmel 432 16Kx1 8kx2 ATU18 484 BGA pin diagram 0.18-um digital clock using gates PQFP 352	PDF
Untitled Abstract: No abstract text available Text: Millimeter Scale Energy Harvesting Based Sensors Steve Grady VP Marketing T his article introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using the energy surrounding the sensor	Original		PDF
ARM dual port SRAM compiler Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2	Original	STD150 STD150 ARM920T/ARM940T, ARM dual port SRAM compiler DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ	PDF
ARM1020E Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2	Original	STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T	PDF

Untitled Abstract: No abstract text available Text: White Paper: Millimeter Scale Energy Harvesting Based Sensors Introduction to Millimeter Scale EH Powered Sensors This paper introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using	Original	WP-72-06	PDF
vcsel spice model Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans Text: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems	Original		PDF
R1LV1616 Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.	Original	R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817	PDF
ECU car Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,	Original	R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
LM2608 Abstract: LM2612 LM2614 Text: POWERING NEXT GENERATION MOBILE DEVICES By Ravindra Ambatipudi, National Semiconductor Corp. Next-generation handsets are morphing from voice-centric telephones to message- and multimedia-based “smart” phones that offer attractive new features. Smart phones offer robust	Original		PDF
Untitled Abstract: No abstract text available Text: Project laboratory and thesis topics at the Faculty of Electrical Engineering and Informatics INTRODUCTION – PLEASE READ CAREFULLY Dear International Student! Thank you for your interest to attend a Project Laboratory course or to prepare your BSc or MSc thesis	Original		PDF
0.18Um Standard cell ST Abstract: DAC1350X C100 V100 resistor 100ohm Text: DAC1350X 0.18µ µm 10-BIT 75MSPS QUAD-DAC GENERAL DESCRIPTION This core is a CMOS quad-channel 10bit 75MSPS D/A converter for general & video applications. The dac1350x core is implemented in the Samsung 0.18um 3.3V CMOS process. Digital inputs are coded as straight binary.	Original	DAC1350X 10-BIT 75MSPS 10bit 75MSPS AVDD33A 100ohm) 0.18Um Standard cell ST DAC1350X C100 V100 resistor 100ohm	PDF
ES29DL320 Abstract: 3FE00 Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz	Original	ES29DL320 32Mbit 125oC ES29DL320 3FE00	PDF
L24002 Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities	Original	L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP	PDF

0.18UM STANDARD CELL ST Search Results

0.18UM STANDARD CELL ST Result Highlights (5)

0.18UM STANDARD CELL ST Datasheets Context Search

ARM dual port SRAM compiler

TDA 9361 PS

DSPG

CX5000

CHIPX

TAG 8939

"vlsi technology" abstract

microcontroller fingerprint

180-nm CMOS standard cell library inverter

tv tuner for laptop

0.18-um CMOS technology

Untitled

ARM dual port SRAM compiler

ARM1020E

Untitled

vcsel spice model

R1LV1616

ECU car

RISC-Processor s3c2410

LM2608

Untitled

0.18Um Standard cell ST

ES29DL320

L24002