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    0.52 V FORWARD VOLTAGE DROP DIODE Search Results

    0.52 V FORWARD VOLTAGE DROP DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    0.52 V FORWARD VOLTAGE DROP DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120CxM3, VI30M120CxM3 O-220AB O-262AA 22-B106 AEC-Q101 V30M120C VI30M120C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120C, VI30M120C O-220AB O-262AA 22-B106 AEC-Q101 V30M120C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: VF30M120C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF VF30M120C-M3 ITO-220AB 22-B106 VF30M120C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120CxM3, VI30M120CxM3 O-220AB O-262AA 22-B106 AEC-Q101 V30M120C VI30M120C 2002/95/EC. 2002/95/EC

    STPS10L60CFP

    Abstract: No abstract text available
    Text: STPS10L60CF/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS • ■ ■ A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC


    Original     		PDF STPS10L60CF/CFP ISOWATT220AB STPS10L60CF O-220FPAB STPS10L60CFP ISOWATT220AB, STPS10L60CFP

    Untitled

    Abstract: No abstract text available
    Text: New Product VB30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses


    Original     		PDF VB30M120C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product V60200PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60200PG 2002/95/EC 2002/96/EC O-247AD O-247s 08-Apr-05

    V60200PG

    Abstract: v60200p JESD22-B102 J-STD-002
    Text: New Product V60200PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60200PG O-247AD 2002/95/EC 2002/96/EC 18-Jul-08 V60200PG v60200p JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: V40170PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V40170PW-M3 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V40170PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V40170PW 22-B106 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    stps10

    Abstract: JESD97 STPS10L60C STPS10L60CFP STPS10L60CG-TR
    Text: STPS10L60C Power Schottky rectifier Main product characteristics A1 IF AV 2x5A VRRM 60 V Tj (max) 150° C VF (max) 0.52 V K A2 K Features and benefits A2 ● Low forward voltage drop ● Negligible switching losses ● Insulated package: TO-220FPAB Insulating voltage = 2000 V DC


    Original     		PDF STPS10L60C O-220FPAB STPS10L60CFP STPS10L60CG O-220FPAB stps10 JESD97 STPS10L60C STPS10L60CFP STPS10L60CG-TR

    Untitled

    Abstract: No abstract text available
    Text: SBRT25U50SLP Green Product Summary VRRM V IO (A) 50 25 25A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI 5060 Features and Benefits VF(MAX) (V) @ +25°C 0.52 • IR(MAX) (mA) @ +25°C 0.5 Reduced ultra-low forward voltage drop (VF); better efficiency


    Original     		PDF SBRT25U50SLP AEC-Q101 DS36338

    Untitled

    Abstract: No abstract text available
    Text: New Product VF30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF VF30M120C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: New Product VB30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses


    Original     		PDF VB30M120C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU.

    stps10l60cfp

    Abstract: STPS10L60CF
    Text: STPS10L60CF/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS • ■ ■ A2 A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC


    Original     		PDF STPS10L60CF/CFP ISOWATT220AB STPS10L60CF O-220FPAB STPS10L60CFP ISOWATT220AB, O-220FPAB stps10l60cfp STPS10L60CF

    STPS10L60CF

    Abstract: STPS10L60CFP
    Text: STPS10L60CF/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS • ■ ■ ■ LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC


    Original     		PDF STPS10L60CF/CFP ISOWATT220AB STPS10L60CF O-220FPAB STPS10L60CFP ISOWATT220AB, O-220FPAB STPS10L60CF STPS10L60CFP

    Untitled

    Abstract: No abstract text available
    Text: New Product V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120C, VI30M120C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC V30M120C 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: V60170PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60170PW 22-B106 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW-M3 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V60H150PW-M3

    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V60H150PW-M3

    Untitled

    Abstract: No abstract text available
    Text: New Product V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30M120C, VI30M120C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC V30M120C 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V60170PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60170PW-M3 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW 22-B106 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 V60H150PW-M3

    Untitled

    Abstract: No abstract text available
    Text: ^77. STPS10L60CF POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x5A V rrm 60 V Tj (max) 150 °C V f (max) 0.52 V FEATURES AND BENEFITS • LOW FORWARD VOLTAGE DROP ■ NEGLIGIBLE SWITCHING LOSSES DESCRIPTION Dual center tap Schottky rectifiers suited for


    OCR Scan     		PDF STPS10L60CF ISOWATT220AB,